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Technische Details IXTH160N10T IXYS
Description: MOSFET N-CH 100V 160A TO247, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 430W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXTH160N10T nach Preis ab 5.93 EUR bis 13.73 EUR
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IXTH160N10T | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 100V 160A TO247Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 1308 Stücke: Lieferzeit 10-14 Tag (e) |
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