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IXTA36P15P-TRL

IXTA36P15P-TRL IXYS


littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.2 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTA36P15P-TRL IXYS

Description: MOSFET P-CH 150V 36A TO263, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote IXTA36P15P-TRL nach Preis ab 6.36 EUR bis 12.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IXTA36P15P-TRL IXTA36P15P-TRL Hersteller : IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 6086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.11 EUR
10+8.24 EUR
100+6.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH