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IXTA86N20X4

IXTA86N20X4 IXYS

IXTA86N20X4_DS.pdf
Hersteller: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 16622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
50+11.58 EUR
100+10.74 EUR
500+10.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTA86N20X4 IXYS

Description: MOSFET 200V 86A N-CH ULTRA TO263, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

Weitere Produktangebote IXTA86N20X4 nach Preis ab 14.1 EUR bis 24.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IXTA86N20X4 IXTA86N20X4 Hersteller : IXYS Power_Semiconductor_Discrete_MOSFET_IXTP86N20X4_Datasheet.pdf MOSFETs TO263 200V 86A N-CH X4CLASS
auf Bestellung 2003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.06 EUR
10+14.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH