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IXTA10P15T

IXTA10P15T IXYS

media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf
Hersteller: IXYS
Description: MOSFET P-CH 150V 10A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
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Technische Details IXTA10P15T IXYS

Description: MOSFET P-CH 150V 10A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tube.

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IXTA10P15T IXTA10P15T Hersteller : IXYS media-3320113.pdf MOSFETs TO263 150V 10A P-CH TRENCH
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