| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.54 EUR |
| 10+ | 10.83 EUR |
| 120+ | 9.64 EUR |
| 510+ | 9.56 EUR |
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Technische Details IXTH180N10T IXYS
Description: MOSFET N-CH 100V 180A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTH180N10T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTH180N10T | IXYS |
 Description: MOSFET N-CH 100V 180A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH180N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO247-3 Gate-source voltage: 30V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of channel: enhancement Reverse recovery time: 100ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTH180N10T |
|
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH180N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH