IXTA70N085T
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Транзистори
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Technische Details IXTA70N085T
Description: MOSFET N-CH 85V 70A TO263, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 85 V, Vgs (Max): ±20V.
Weitere Produktangebote IXTA70N085T
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IXTA70N085T | Hersteller : IXYS |
Description: MOSFET N-CH 85V 70A TO263 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V |
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