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IXTA70N085T



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Technische Details IXTA70N085T

Description: MOSFET N-CH 85V 70A TO263, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 85 V, Vgs (Max): ±20V.

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IXTA70N085T IXTA70N085T Hersteller : IXYS Description: MOSFET N-CH 85V 70A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH