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IXTA140N055T2

IXTA140N055T2 IXYS

media?resourcetype=datasheets&itemid=886c24a8-3d1d-4378-98ef-e3645ff1ea05&filename=littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf Hersteller: IXYS
Description: MOSFET N-CH 55V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+3.24 EUR
Mindestbestellmenge: 300
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Technische Details IXTA140N055T2 IXYS

Description: MOSFET N-CH 55V 140A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V.

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IXTA140N055T2 IXTA140N055T2 Hersteller : IXYS media-3321551.pdf MOSFET MSFT N-CH TRENCH GATE -GEN2
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