IXTA36P15P-TRL IXYS
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details IXTA36P15P-TRL IXYS
Description: MOSFET P-CH 150V 36A TO263, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXTA36P15P-TRL nach Preis ab 7.57 EUR bis 15.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTA36P15P-TRL | IXYS |
Description: MOSFET P-CH 150V 36A TO263 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 6086 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA36P15P-TRL | LITTELFUSE |
Description: LITTELFUSE - IXTA36P15P-TRL - MOSFET, P-CH, 150V, 36A, TO-263AA tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263AA Anzahl der Pins: 3Pin(s) Produktpalette: PolarP Series productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm directShipCharge: 25 |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTA36P15P-TRL |
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Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 6086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.41 EUR |
| 10+ | 9.81 EUR |
| 100+ | 7.57 EUR |
| IXTA36P15P-TRL |
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Hersteller: LITTELFUSE
Description: LITTELFUSE - IXTA36P15P-TRL - MOSFET, P-CH, 150V, 36A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
directShipCharge: 25
Description: LITTELFUSE - IXTA36P15P-TRL - MOSFET, P-CH, 150V, 36A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
directShipCharge: 25
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 15.37 EUR |
| 19+ | 12.23 EUR |
| 25+ | 10.65 EUR |
| 50+ | 10.02 EUR |
| 100+ | 9.4 EUR |