IXTA60N20T-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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Technische Details IXTA60N20T-TRL IXYS
Description: MOSFET N-CH 200V 60A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.
Weitere Produktangebote IXTA60N20T-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA60N20T-TRL | IXYS |
MOSFETs IXTA60N20T TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTA60N20T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns Type of transistor: N-MOSFET Technology: Trench Drain-source voltage: 200V Drain current: 60A Power dissipation: 500W Case: D2PAK; TO263 Gate-source voltage: 20V Mounting: SMD Gate charge: 73nC Kind of channel: enhancement Reverse recovery time: 118ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA60N20T-TRL |
|
Hersteller: IXYS
MOSFETs IXTA60N20T TRL
MOSFETs IXTA60N20T TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTA60N20T-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH