| Anzahl | Preis |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 6.12 EUR |
| 50+ | 5.26 EUR |
| 100+ | 4.72 EUR |
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Technische Details IXTA62N15P IXYS
Description: MOSFET N-CH 150V 62A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXTA62N15P nach Preis ab 5.46 EUR bis 8.03 EUR
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IXTA62N15P | Hersteller : IXYS |
 Description: MOSFET N-CH 150V 62A TO263Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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