IXTH10P50P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 13.43 EUR |
| 30+ | 8.56 EUR |
| 120+ | 7.25 EUR |
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Technische Details IXTH10P50P Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXTH10P50P nach Preis ab 7.76 EUR bis 13.59 EUR
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IXTH10P50P | Hersteller : IXYS |
MOSFETs -10.0 Amps -500V 1.000 Rds |
auf Bestellung 1085 Stücke: Lieferzeit 10-14 Tag (e) |
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