IXTH140P10T IXYS SEMICONDUCTOR
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTH140P10T - Leistungs-MOSFET, p-Kanal, 100 V, 140 A, 0.01 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 140A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 568W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (12-Jan-2017)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 34.71 EUR |
| 10+ | 29.61 EUR |
| 50+ | 27.14 EUR |
| 100+ | 24.69 EUR |
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Technische Details IXTH140P10T IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXTH140P10T - Leistungs-MOSFET, p-Kanal, 100 V, 140 A, 0.01 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 140A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 568W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: TrenchP, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.01ohm, SVHC: No SVHC (12-Jan-2017).
Weitere Produktangebote IXTH140P10T nach Preis ab 26.68 EUR bis 42.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IXTH140P10T | IXYS |
MOSFETs TrenchP Channel Power MOSFETs |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH140P10T | IXYS |
Description: MOSFET P-CH 100V 140A TO247 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 568W Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Drain-source voltage: -100V Drain current: -140A Reverse recovery time: 130ns Gate charge: 400nC On-state resistance: 10mΩ Gate-source voltage: ±15V |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTH140P10T |
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Hersteller: IXYS
MOSFETs TrenchP Channel Power MOSFETs
MOSFETs TrenchP Channel Power MOSFETs
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.87 EUR |
| 10+ | 26.68 EUR |
| IXTH140P10T |
|
Hersteller: IXYS
Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.77 EUR |
| 10+ | 36.56 EUR |
| IXTH140P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |