IXTA170N075T2 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 63ns
Features of semiconductor devices: thrench gate power mosfet
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Technische Details IXTA170N075T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 170A, Power dissipation: 360W, Case: TO263, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 109nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 63ns, Features of semiconductor devices: thrench gate power mosfet.
Weitere Produktangebote IXTA170N075T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA170N075T2 | IXYS |
Description: MOSFET N-CH 75V 170A TO263 |
auf Bestellung 2050 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA170N075T2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 75V 170A TO263
Description: MOSFET N-CH 75V 170A TO263
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)