
IXTA170N075T2 IXYS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
19+ | 3.78 EUR |
24+ | 3 EUR |
26+ | 2.85 EUR |
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Technische Details IXTA170N075T2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 170A, Power dissipation: 360W, Case: TO263, On-state resistance: 5.4mΩ, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 109nC, Reverse recovery time: 63ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTA170N075T2 nach Preis ab 2.85 EUR bis 4.2 EUR
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IXTA170N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO263 On-state resistance: 5.4mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Reverse recovery time: 63ns |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA170N075T2 | Hersteller : IXYS |
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auf Bestellung 2050 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA170N075T2 | Hersteller : IXYS |
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