Technische Details IXTA3N100P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 3A, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 36nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: standard power mosfet, Reverse recovery time: 820ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTA3N100P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA3N100P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA3N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA3N100P | Hersteller : IXYS |
MOSFET 3 Amps 1000V 4.8 Rds |
Produkt ist nicht verfügbar |
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IXTA3N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
Produkt ist nicht verfügbar |