IXTA05N100-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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Technische Details IXTA05N100-TRL IXYS
Description: MOSFET N-CH 1000V 750MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IXTA05N100-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA05N100-TRL | IXYS |
MOSFETs IXTA05N100 TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXTA05N100-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 17Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Reverse recovery time: 710ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA05N100-TRL |
|
Hersteller: IXYS
MOSFETs IXTA05N100 TRL
MOSFETs IXTA05N100 TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTA05N100-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 17Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 750mA; 40W; D2PAK,TO263; 710ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 17Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH