Technische Details IXTA90N055T2 Littelfuse
Description: MOSFET N-CH 55V 90A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V.
Weitere Produktangebote IXTA90N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTA90N055T2 | Hersteller : IXYS |
 IXTA90N055T2 SMD N channel transistors |
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IXTA90N055T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 55V 90A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA90N055T2 | Hersteller : IXYS |
MOSFETs 90 Amps 55V 0.0084 Rds |
Produkt ist nicht verfügbar |