IXTH10N100D2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 28.14 EUR |
| 30+ | 19.74 EUR |
| 120+ | 18.82 EUR |
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Technische Details IXTH10N100D2 IXYS
Description: MOSFET N-CH 1000V 10A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V.
Weitere Produktangebote IXTH10N100D2 nach Preis ab 21.86 EUR bis 28.21 EUR
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IXTH10N100D2 | Hersteller : IXYS |
MOSFETs TO247 1KV 10A N-CH DEPL |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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