Technische Details IXTH130N15X4 IXYS
Description: MOSFET N-CH 150V 130A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXTH130N15X4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTH130N15X4 | Hersteller : IXYS |
 Description: MOSFET N-CH 150V 130A TO247Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |