IXTA3N100D2-TRL Littelfuse Inc.

Description: MOSFET N-CH 1000V 3A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 125W (Tc), FET Feature: Depletion Mode, Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V, Current - Continuous Drain (Id) @ 25°C: 3A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).