Weitere Produktangebote IXTH15N50L2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTH15N50L2 | IXYS |
Description: MOSFET N-CH 500V 15A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V |
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|
IXTH15N50L2 | IXYS |
MOSFETs LINEAR L2 SERIES MOSFET 500V 15A |
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|
IXTH15N50L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.48Ω Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTH15N50L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Description: MOSFET N-CH 500V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH15N50L2 |
![]() |
Hersteller: IXYS
MOSFETs LINEAR L2 SERIES MOSFET 500V 15A
MOSFETs LINEAR L2 SERIES MOSFET 500V 15A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH15N50L2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




