IXTH120P065T Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET P-CH 65V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.24 EUR |
| 30+ | 8.2 EUR |
| 120+ | 7.05 EUR |
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Technische Details IXTH120P065T Littelfuse Inc.
Description: MOSFET P-CH 65V 120A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V.
Weitere Produktangebote IXTH120P065T nach Preis ab 7.67 EUR bis 13.5 EUR
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IXTH120P065T | Hersteller : IXYS |
MOSFETs -120 Amps -65V 0.01 Rds |
auf Bestellung 2449 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH120P065T | Hersteller : Littelfuse |
Trans MOSFET P-CH 65V 120A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH120P065T | Hersteller : Littelfuse |
Trans MOSFET P-CH 65V 120A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH120P065T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH120P065T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 53ns |
Produkt ist nicht verfügbar |