| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 4.82 EUR |
| 50+ | 4.16 EUR |
| 100+ | 3.58 EUR |
| 250+ | 3.47 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 3.09 EUR |
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Technische Details IXTA32P05T IXYS
Description: MOSFET P-CH 50V 32A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXTA32P05T nach Preis ab 3.2 EUR bis 5.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTA32P05T | Littelfuse Inc. |
 Description: MOSFET P-CH 50V 32A TO263Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 675 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTA32P05T |
|
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 50V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET P-CH 50V 32A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
| 50+ | 4.19 EUR |
| 100+ | 3.59 EUR |
| 500+ | 3.2 EUR |