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IXBX25N250 IXBX25N250 IXYS littelfuse-discrete-igbts-ixbx25n250-datasheet?assetguid=51f737dc-57fb-45d3-815f-758f253b70d3 Description: IGBT 2500V 55A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Gate Charge: 103 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Description: IGBT 3000V 34A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 150 W
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IXBH12N300 IXBH12N300 IXYS littelfuse-discrete-igbts-ixb-12n300-datasheet?assetguid=cccdaa0c-6cbc-4898-808c-72a3b4a08e74 Description: IGBT 3000V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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IXBF32N300 IXBF32N300 IXYS DS100119(IXBF32N300).pdf Description: IGBT 3000V 40A 160W ISOPLUSI4
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IXBT12N300 IXBT12N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf Description: IGBT 3000V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268AA
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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IXBF12N300 IXBF12N300 IXYS IXBF12N300.pdf Description: IGBT 3000V 26A 125W ISOPLUSI4
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IXBK55N300 IXBK55N300 IXYS Description: IGBT 3000V 130A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
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IXBT20N300 IXBT20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf Description: IGBT 3000V 50A 250W TO268
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Description: IGBT 3000V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
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IXBH32N300 IXBH32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXBT32N300 IXBT32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A 400W TO268
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IXBX55N300 IXBX55N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf Description: IGBT 3000V 130A 625W PLUS247
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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IRFP260 IXYS Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IXFB170N30P IXFB170N30P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb170n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
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IXFB52N90P IXFB52N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb52n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFH12N90P IXFH12N90P IXYS IXF%28H%2CV%2912N90P%28S%29.pdf Description: MOSFET N-CH 900V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFH18N90P IXFH18N90P IXYS DS100057BIXFHFTFV18N90PS.pdf Description: MOSFET N-CH 900V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFH24N90P IXFH24N90P IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXFK40N90P IXFK40N90P IXYS DS100061AIXFKFX40N90P.pdf Description: MOSFET N-CH 900V 40A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
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IXFN300N10P IXFN300N10P IXYS DS100016AIXFN300N10P.pdf Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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IXFN56N90P IXFN56N90P IXYS DS100066BIXFN56N90P.pdf Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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IXFR16N80P IXFR16N80P IXYS Description: MOSFET N-CH ISOPLUS247
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IXFR40N90P IXFR40N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 21A ISOPLUS247
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IXGB200N60B3 IXGB200N60B3 IXYS littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
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IXTC62N15P IXYS 99622.pdf Description: MOSFET N-CH ISOPLUS-220
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IXTP18N60PM IXTP18N60PM IXYS Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ28N15P IXTQ28N15P IXYS Reliability2008.pdf Description: MOSFET N-CH TO-3P
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IXTR62N15P IXTR62N15P IXYS 99622.pdf Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU2N80P IXTU2N80P IXYS DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf Description: MOSFET N-CH TO-251
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IXTY4N60P IXTY4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO252
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IXTV02N250S IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN240N15T2 IXFN240N15T2 IXYS DS100192IXFN240N15T2.pdf Description: MOSFET N-CH 150V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN360N15T2 IXFN360N15T2 IXYS ixfn360n15t2-datasheet?assetguid=3b33fd6e-78dc-4051-88f6-4f577ef7a2b9 Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
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IXFN320N17T2 IXFN320N17T2 IXYS DS100189(IXFN320N17T2).pdf Description: MOSFET N-CH 170V 260A SOT227
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IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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IXFN52N90P IXFN52N90P IXYS Description: MOSFET N-CH 900V 43A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXFR18N90P IXFR18N90P IXYS media?resourcetype=datasheets&itemid=3F667995-3A56-435B-BAA3-FE8DB0C19172&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR18N90P-Datasheet.PDF Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR24N90P IXFR24N90P IXYS media?resourcetype=datasheets&itemid=C6391AB1-2EC0-4FB4-8D1C-F9F4C576D9BC&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR24N90P-Datasheet.PDF Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXFT18N90P IXFT18N90P IXYS Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90P IXFV12N90P IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90P IXFV18N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS220
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IXFX240N15T2 IXFX240N15T2 IXYS DS100191IXFKFX240N15T2.pdf Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90PS IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90PS IXFV18N90PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS-220SMD
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IXDN509D1T/R IXYS DS99670.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IXBX25N250 littelfuse-discrete-igbts-ixbx25n250-datasheet?assetguid=51f737dc-57fb-45d3-815f-758f253b70d3
IXBX25N250
Hersteller: IXYS
Description: IGBT 2500V 55A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Gate Charge: 103 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
auf Bestellung 866 Stücke:
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AnzahlPrivatkunde
1+88.26 EUR
30+62.77 EUR
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Hersteller: IXYS
Description: IGBT 3000V 34A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXBH12N300 littelfuse-discrete-igbts-ixb-12n300-datasheet?assetguid=cccdaa0c-6cbc-4898-808c-72a3b4a08e74
IXBH12N300
Hersteller: IXYS
Description: IGBT 3000V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
auf Bestellung 231 Stücke:
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1+86.29 EUR
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IXBF32N300 DS100119(IXBF32N300).pdf
IXBF32N300
Hersteller: IXYS
Description: IGBT 3000V 40A 160W ISOPLUSI4
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IXBT12N300 littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf
IXBT12N300
Hersteller: IXYS
Description: IGBT 3000V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268AA
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXBF12N300 IXBF12N300.pdf
IXBF12N300
Hersteller: IXYS
Description: IGBT 3000V 26A 125W ISOPLUSI4
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IXBK55N300
IXBK55N300
Hersteller: IXYS
Description: IGBT 3000V 130A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
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1+201.69 EUR
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IXBT20N300 littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf
IXBT20N300
Hersteller: IXYS
Description: IGBT 3000V 50A 250W TO268
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Description: IGBT 3000V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
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IXBH32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBH32N300
Hersteller: IXYS
Description: IGBT 3000V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXBT32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBT32N300
Hersteller: IXYS
Description: IGBT 3000V 80A 400W TO268
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IXBX55N300 littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf
IXBX55N300
Hersteller: IXYS
Description: IGBT 3000V 130A 625W PLUS247
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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Mindestbestellmenge: 2000 Stücke
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Produkt ist nicht verfügbar
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
Produkt ist nicht verfügbar
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
Produkt ist nicht verfügbar
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
Produkt ist nicht verfügbar
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
Produkt ist nicht verfügbar
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IRFP260
Hersteller: IXYS
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IXFB170N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb170n30p_datasheet.pdf.pdf
IXFB170N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFB52N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb52n90p_datasheet.pdf.pdf
IXFB52N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH12N90P IXF%28H%2CV%2912N90P%28S%29.pdf
IXFH12N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.08 EUR
30+11.35 EUR
120+9.66 EUR
510+8.98 EUR
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IXFH18N90P DS100057BIXFHFTFV18N90PS.pdf
IXFH18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1656 Stücke:
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AnzahlPrivatkunde
1+30.1 EUR
30+18.48 EUR
120+15.93 EUR
510+14.73 EUR
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IXFH24N90P littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
IXFH24N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 85 Stücke:
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AnzahlPrivatkunde
1+36.87 EUR
30+23.04 EUR
60+21.4 EUR
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IXFK40N90P DS100061AIXFKFX40N90P.pdf
IXFK40N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 40A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
1+64.43 EUR
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IXFN300N10P DS100016AIXFN300N10P.pdf
IXFN300N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 318 Stücke:
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AnzahlPrivatkunde
1+96.82 EUR
10+73.35 EUR
100+66.29 EUR
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IXFN56N90P DS100066BIXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 232 Stücke:
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AnzahlPrivatkunde
1+128.78 EUR
10+99.04 EUR
100+93.32 EUR
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IXFR16N80P
IXFR16N80P
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Produkt ist nicht verfügbar
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IXFR40N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf
IXFR40N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 21A ISOPLUS247
Produkt ist nicht verfügbar
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IXGB200N60B3 littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf
IXGB200N60B3
Hersteller: IXYS
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXTC62N15P 99622.pdf
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS-220
Produkt ist nicht verfügbar
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IXTP18N60PM
IXTP18N60PM
Hersteller: IXYS
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ28N15P Reliability2008.pdf
IXTQ28N15P
Hersteller: IXYS
Description: MOSFET N-CH TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 180 Stücke
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IXTR62N15P 99622.pdf
IXTR62N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU2N80P DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf
IXTU2N80P
Hersteller: IXYS
Description: MOSFET N-CH TO-251
Produkt ist nicht verfügbar
Mindestbestellmenge: 375 Stücke
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IXTY4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTY4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO252
Produkt ist nicht verfügbar
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IXTV02N250S IXTx02N250%28S%29.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN240N15T2 DS100192IXFN240N15T2.pdf
IXFN240N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN360N15T2 ixfn360n15t2-datasheet?assetguid=3b33fd6e-78dc-4051-88f6-4f577ef7a2b9
IXFN360N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+86.44 EUR
10+65.25 EUR
100+61.26 EUR
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IXFN320N17T2 DS100189(IXFN320N17T2).pdf
IXFN320N17T2
Hersteller: IXYS
Description: MOSFET N-CH 170V 260A SOT227
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+76.8 EUR
10+57.3 EUR
50+49.47 EUR
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IXFN52N90P
IXFN52N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXFR18N90P media?resourcetype=datasheets&itemid=3F667995-3A56-435B-BAA3-FE8DB0C19172&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR18N90P-Datasheet.PDF
IXFR18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFR24N90P media?resourcetype=datasheets&itemid=C6391AB1-2EC0-4FB4-8D1C-F9F4C576D9BC&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR24N90P-Datasheet.PDF
IXFR24N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT18N90P
IXFT18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90P IXF(H,V)12N90P(S).pdf
IXFV12N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFV18N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS220
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IXFX240N15T2 DS100191IXFKFX240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
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IXFV12N90PS IXF(H,V)12N90P(S).pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFV18N90PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90PS
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS-220SMD
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IXDN509D1T/R DS99670.pdf
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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