FMM22-05PF IXYS
Hersteller: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Power dissipation: 132W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Power dissipation: 132W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 21.98 EUR |
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Technische Details FMM22-05PF IXYS
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A, Mounting: THT, Kind of package: tube, Gate charge: 50nC, Technology: PolarHV™, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 55A, Case: ISOPLUS i4-pac™ x024a, Semiconductor structure: double series, Reverse recovery time: 200ns, Drain-source voltage: 500V, Drain current: 13A, On-state resistance: 0.27Ω, Type of transistor: N-MOSFET x2, Power dissipation: 132W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FMM22-05PF nach Preis ab 21.98 EUR bis 55.43 EUR
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FMM22-05PF | Hersteller : IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A Mounting: THT Kind of package: tube Gate charge: 50nC Technology: PolarHV™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 55A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.27Ω Type of transistor: N-MOSFET x2 Power dissipation: 132W Polarisation: unipolar |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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FMM22-05PF | Hersteller : IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 13 |
auf Bestellung 8 Stücke: Lieferzeit 14-28 Tag (e) |
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FMM22-05PF | Hersteller : IXYS |
Description: MOSFET 2N-CH 500V 13A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 132W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
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