IXTQ470P2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTQ470P2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns, Case: TO3P, Mounting: THT, On-state resistance: 0.145Ω, Kind of package: tube, Type of transistor: N-MOSFET, Features of semiconductor devices: standard power mosfet, Polarisation: unipolar, Gate charge: 88nC, Reverse recovery time: 400ns, Drain current: 42A, Drain-source voltage: 500V, Power dissipation: 830W, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
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IXTQ470P2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 88nC Reverse recovery time: 400ns Drain current: 42A Drain-source voltage: 500V Power dissipation: 830W Kind of channel: enhancement |
Produkt ist nicht verfügbar |