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Technische Details IXTQ470P2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns, Case: TO3P, Mounting: THT, On-state resistance: 0.145Ω, Kind of package: tube, Power dissipation: 830W, Gate charge: 88nC, Polarisation: unipolar, Features of semiconductor devices: standard power mosfet, Drain current: 42A, Kind of channel: enhancement, Drain-source voltage: 500V, Type of transistor: N-MOSFET, Reverse recovery time: 400ns.
Weitere Produktangebote IXTQ470P2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTQ470P2 | IXYS |
 MOSFET PolarP2 Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTQ470P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Power dissipation: 830W Gate charge: 88nC Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 42A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTQ470P2 |
|
Hersteller: IXYS
MOSFET PolarP2 Power MOSFET
MOSFET PolarP2 Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ470P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH