IXTQ470P2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTQ470P2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns, Case: TO3P, Mounting: THT, On-state resistance: 0.145Ω, Kind of package: tube, Reverse recovery time: 400ns, Drain-source voltage: 500V, Drain current: 42A, Type of transistor: N-MOSFET, Power dissipation: 830W, Polarisation: unipolar, Features of semiconductor devices: standard power mosfet, Gate charge: 88nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
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IXTQ470P2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 42A Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 88nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |