
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 16.83 EUR |
10+ | 12.32 EUR |
510+ | 12.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFH6N120P IXYS
Description: MOSFET N-CH 1200V 6A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V.
Weitere Produktangebote IXFH6N120P nach Preis ab 9.55 EUR bis 17.14 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXFH6N120P | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V |
auf Bestellung 451 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXFH6N120P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||
![]() |
IXFH6N120P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||
![]() |
IXFH6N120P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 92nC Drain current: 6A Drain-source voltage: 1.2kV Power dissipation: 250W Case: TO247-3 Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
|||||||||
![]() |
IXFH6N120P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 92nC Drain current: 6A Drain-source voltage: 1.2kV Power dissipation: 250W Case: TO247-3 Kind of channel: enhancement Mounting: THT |
Produkt ist nicht verfügbar |