| Anzahl | Preis |
|---|---|
| 1+ | 18.06 EUR |
| 10+ | 15.49 EUR |
| 120+ | 12.9 EUR |
| 270+ | 12.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFT42N50P2 IXYS
Description: MOSFET N-CH 500V 42A TO268, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote IXFT42N50P2 nach Preis ab 13.84 EUR bis 18.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFT42N50P2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 42A TO268Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|