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IXFH18N90P IXFH18N90P IXYS DS100057BIXFHFTFV18N90PS.pdf Description: MOSFET N-CH 900V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1660 Stücke:
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30+11.53 EUR
120+10.92 EUR
510+10.61 EUR
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IXFH24N90P IXFH24N90P IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 85 Stücke:
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IXFN300N10P IXFN300N10P IXYS DS100016AIXFN300N10P.pdf Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 101 Stücke:
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IXFN56N90P IXFN56N90P IXYS DS100066BIXFN56N90P.pdf Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 248 Stücke:
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IXFR16N80P IXFR16N80P IXYS Description: MOSFET N-CH ISOPLUS247
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IXFR40N90P IXFR40N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 21A ISOPLUS247
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IXGB200N60B3 IXGB200N60B3 IXYS littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXTC62N15P IXYS 99622.pdf Description: MOSFET N-CH ISOPLUS-220
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IXTP18N60PM IXTP18N60PM IXYS Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTQ28N15P IXTQ28N15P IXYS Reliability2008.pdf Description: MOSFET N-CH TO-3P
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IXTR62N15P IXTR62N15P IXYS 99622.pdf Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTU2N80P IXTU2N80P IXYS DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf Description: MOSFET N-CH TO-251
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IXTY4N60P IXTY4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO252
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IXTV02N250S IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN360N15T2 IXFN360N15T2 IXYS ixfn360n15t2-datasheet?assetguid=3b33fd6e-78dc-4051-88f6-4f577ef7a2b9 Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
auf Bestellung 168 Stücke:
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IXFN320N17T2 IXFN320N17T2 IXYS DS100189(IXFN320N17T2).pdf Description: MOSFET N-CH 170V 260A SOT227
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IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 1040 Stücke:
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IXFN52N90P IXFN52N90P IXYS Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR18N90P IXFR18N90P IXYS Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR24N90P IXFR24N90P IXYS Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXFT18N90P IXFT18N90P IXYS Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFV12N90P IXFV12N90P IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFV18N90P IXFV18N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS220
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IXFX240N15T2 IXFX240N15T2 IXYS Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
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IXFV12N90PS IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFV18N90PS IXFV18N90PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS-220SMD
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IXDN509D1T/R IXYS DS99670.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXGH25N250 IXGH25N250 IXYS media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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IXGX75N250 IXGX75N250 IXYS DS99826B(IXGK-X75N250).pdf Description: IGBT 2500V 170A 780W PLUS247
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IXTV03N400S IXYS DS100214A-(IXTH_V03N400_S).pdf Description: MOSFET N-CH 4000V .3A PLUS 220
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IXFT42N50P2 IXFT42N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.5 EUR
10+16.71 EUR
100+13.84 EUR
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IXTH450P2 IXTH450P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.98 EUR
30+7.9 EUR
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IXTP450P2 IXTP450P2 IXYS DS100241ATPTHTQ450P2.pdf Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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IXTQ450P2 IXTQ450P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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IXTQ470P2 IXTQ470P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq470p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO3P
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IXFH52N50P2 IXFH52N50P2 IXYS DS100256AIXFHFT52N50P2.pdf Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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IXFH42N50P2 IXFH42N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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IXFK74N50P2 IXFK74N50P2 IXYS DS100252A(IXFK-FX74N50P2).pdf Description: MOSFET N-CH 500V 74A TO264AA
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IXFT52N50P2 IXFT52N50P2 IXYS Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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IXFX74N50P2 IXFX74N50P2 IXYS Description: MOSFET N-CH 500V 74A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 500mA, 10V
Power Dissipation (Max): 1400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
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IXFK94N50P2 IXFK94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
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IXFX94N50P2 IXFX94N50P2 IXYS Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
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IXFB120N50P2 IXFB120N50P2 IXYS media?resourcetype=datasheets&itemid=6F73C881-3671-49E5-9A6E-5301ED97E2C4&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFB120N50P2-Datasheet.PDF Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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FMM110-015X2F FMM110-015X2F IXYS Description: MOSFET 2N-CH 150V 53A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 180W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
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FMM22-05PF IXYS Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
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FMM22-06PF IXYS Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
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FMM50-025TF IXYS DS100040A-(FMM50-025TF).pdf Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
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FMM60-02TF IXYS DS100048-(FMM60-02TF).pdf Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
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FMP26-02P FMP26-02P IXYS DS100033A(FMP26-02P).pdf Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
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FMP36-015P IXYS DS100034-(FMP36-015P).pdf Description: MOSFET N/P-CH 150V 36A/22A I4PAC
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FMP76-010T IXYS DS100037-(FMP76-010T).pdf Description: MOSFET N/P-CH 100V 62A/54A I4PAC
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IXBH24N170 IXBH24N170 IXYS Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
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IXBK75N170 IXBK75N170 IXYS littelfuse-discrete-igbts-ixbx75n170a-datasheet?assetguid=136c8b27-d568-45a4-9a6f-e3e01683adfd Description: IGBT 1700V 200A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
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IXBK75N170A IXBK75N170A IXYS DS100166A(IXBK-BX75N170A).pdf Description: IGBT 1700V 110A 1040W TO264
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IXBN75N170 IXBN75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
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IXBX75N170 IXBX75N170 IXYS littelfuse-discrete-igbts-ixbx75n170a-datasheet?assetguid=136c8b27-d568-45a4-9a6f-e3e01683adfd Description: IGBT 1700V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
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IXBX75N170A IXBX75N170A IXYS littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf Description: IGBT 1700V 110A 1040W PLUS247
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IXFA110N15T2-TRL IXFA110N15T2-TRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
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IXFA6N120P IXFA6N120P IXYS littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9 Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 4454 Stücke:
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IXFH340N075T2 IXFH340N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFH18N90P DS100057BIXFHFTFV18N90PS.pdf
IXFH18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
30+11.53 EUR
120+10.92 EUR
510+10.61 EUR
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IXFH24N90P littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
IXFH24N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 85 Stücke:
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Anzahl Preis
1+25.64 EUR
30+15.87 EUR
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IXFN300N10P DS100016AIXFN300N10P.pdf
IXFN300N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+70.29 EUR
10+52.9 EUR
100+49.23 EUR
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IXFN56N90P DS100066BIXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.55 EUR
10+69.18 EUR
100+67.19 EUR
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IXFR16N80P
IXFR16N80P
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Produkt ist nicht verfügbar
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IXFR40N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf
IXFR40N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 21A ISOPLUS247
Produkt ist nicht verfügbar
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IXGB200N60B3 littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf
IXGB200N60B3
Hersteller: IXYS
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXTC62N15P 99622.pdf
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS-220
Produkt ist nicht verfügbar
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IXTP18N60PM
IXTP18N60PM
Hersteller: IXYS
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ28N15P Reliability2008.pdf
IXTQ28N15P
Hersteller: IXYS
Description: MOSFET N-CH TO-3P
Produkt ist nicht verfügbar
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IXTR62N15P 99622.pdf
IXTR62N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU2N80P DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf
IXTU2N80P
Hersteller: IXYS
Description: MOSFET N-CH TO-251
Produkt ist nicht verfügbar
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IXTY4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTY4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO252
Produkt ist nicht verfügbar
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IXTV02N250S IXTx02N250%28S%29.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN360N15T2 ixfn360n15t2-datasheet?assetguid=3b33fd6e-78dc-4051-88f6-4f577ef7a2b9
IXFN360N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.97 EUR
10+55.84 EUR
100+52.42 EUR
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IXFN320N17T2 DS100189(IXFN320N17T2).pdf
IXFN320N17T2
Hersteller: IXYS
Description: MOSFET N-CH 170V 260A SOT227
Produkt ist nicht verfügbar
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IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.47 EUR
10+38.81 EUR
100+34.23 EUR
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IXFN52N90P
IXFN52N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR18N90P
IXFR18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR24N90P
IXFR24N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT18N90P
IXFT18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90P IXF(H,V)12N90P(S).pdf
IXFV12N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS220
Produkt ist nicht verfügbar
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IXFX240N15T2
IXFX240N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90PS IXF(H,V)12N90P(S).pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90PS
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS-220SMD
Produkt ist nicht verfügbar
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IXDN509D1T/R DS99670.pdf
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IXGH25N250 media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf
IXGH25N250
Hersteller: IXYS
Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXGX75N250 DS99826B(IXGK-X75N250).pdf
IXGX75N250
Hersteller: IXYS
Description: IGBT 2500V 170A 780W PLUS247
Produkt ist nicht verfügbar
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IXTV03N400S DS100214A-(IXTH_V03N400_S).pdf
Hersteller: IXYS
Description: MOSFET N-CH 4000V .3A PLUS 220
Produkt ist nicht verfügbar
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IXFT42N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf
IXFT42N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.5 EUR
10+16.71 EUR
100+13.84 EUR
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IXTH450P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf
IXTH450P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.98 EUR
30+7.9 EUR
Mindestbestellmenge: 2
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IXTP450P2 DS100241ATPTHTQ450P2.pdf
IXTP450P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ450P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf
IXTQ450P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ470P2 littelfuse_discrete_mosfets_n-channel_standard_ixtq470p2_datasheet.pdf.pdf
IXTQ470P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 42A TO3P
Produkt ist nicht verfügbar
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IXFH52N50P2 DS100256AIXFHFT52N50P2.pdf
IXFH52N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH42N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf
IXFH42N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.44 EUR
30+12.32 EUR
120+11.02 EUR
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IXFK74N50P2 DS100252A(IXFK-FX74N50P2).pdf
IXFK74N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 74A TO264AA
Produkt ist nicht verfügbar
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IXFT52N50P2
IXFT52N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX74N50P2
IXFX74N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 74A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 500mA, 10V
Power Dissipation (Max): 1400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFK94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf
IXFK94N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 2 Stücke:
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Anzahl Preis
1+37.56 EUR
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IXFX94N50P2
IXFX94N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFB120N50P2 media?resourcetype=datasheets&itemid=6F73C881-3671-49E5-9A6E-5301ED97E2C4&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFB120N50P2-Datasheet.PDF
IXFB120N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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FMM110-015X2F
FMM110-015X2F
Hersteller: IXYS
Description: MOSFET 2N-CH 150V 53A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 180W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Produkt ist nicht verfügbar
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FMM22-05PF
Hersteller: IXYS
Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Produkt ist nicht verfügbar
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FMM22-06PF
Hersteller: IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Produkt ist nicht verfügbar
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FMM50-025TF DS100040A-(FMM50-025TF).pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Produkt ist nicht verfügbar
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FMM60-02TF DS100048-(FMM60-02TF).pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Produkt ist nicht verfügbar
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FMP26-02P DS100033A(FMP26-02P).pdf
FMP26-02P
Hersteller: IXYS
Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Produkt ist nicht verfügbar
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FMP36-015P DS100034-(FMP36-015P).pdf
Hersteller: IXYS
Description: MOSFET N/P-CH 150V 36A/22A I4PAC
Produkt ist nicht verfügbar
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FMP76-010T DS100037-(FMP76-010T).pdf
Hersteller: IXYS
Description: MOSFET N/P-CH 100V 62A/54A I4PAC
Produkt ist nicht verfügbar
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IXBH24N170
IXBH24N170
Hersteller: IXYS
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.53 EUR
30+21.91 EUR
120+20.11 EUR
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IXBK75N170 littelfuse-discrete-igbts-ixbx75n170a-datasheet?assetguid=136c8b27-d568-45a4-9a6f-e3e01683adfd
IXBK75N170
Hersteller: IXYS
Description: IGBT 1700V 200A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.06 EUR
25+56.93 EUR
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IXBK75N170A DS100166A(IXBK-BX75N170A).pdf
IXBK75N170A
Hersteller: IXYS
Description: IGBT 1700V 110A 1040W TO264
Produkt ist nicht verfügbar
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IXBN75N170 littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf
IXBN75N170
Hersteller: IXYS
Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
Produkt ist nicht verfügbar
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IXBX75N170 littelfuse-discrete-igbts-ixbx75n170a-datasheet?assetguid=136c8b27-d568-45a4-9a6f-e3e01683adfd
IXBX75N170
Hersteller: IXYS
Description: IGBT 1700V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+101.45 EUR
30+77.39 EUR
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IXBX75N170A littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf
IXBX75N170A
Hersteller: IXYS
Description: IGBT 1700V 110A 1040W PLUS247
Produkt ist nicht verfügbar
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IXFA110N15T2-TRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFA110N15T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA6N120P littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9
IXFA6N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 4454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.93 EUR
50+8.98 EUR
100+8.65 EUR
500+7.96 EUR
Mindestbestellmenge: 2
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IXFH340N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf
IXFH340N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.81 EUR
10+16.38 EUR
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