IXFH12N90P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 900V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.03 EUR |
| 30+ | 9.54 EUR |
| 120+ | 8.12 EUR |
| 510+ | 7.55 EUR |
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Technische Details IXFH12N90P IXYS
Description: MOSFET N-CH 900V 12A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote IXFH12N90P nach Preis ab 9.29 EUR bis 16.19 EUR
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IXFH12N90P | Hersteller : IXYS |
MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH12N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH12N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Polarisation: unipolar Gate charge: 56nC On-state resistance: 1Ω Drain current: 12A Power dissipation: 380W Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |