auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.7 EUR |
| 10+ | 9.4 EUR |
| 120+ | 9.33 EUR |
| 510+ | 9.29 EUR |
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Technische Details IXFH12N90P IXYS
Description: MOSFET N-CH 900V 12A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote IXFH12N90P nach Preis ab 7.72 EUR bis 16.4 EUR
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IXFH12N90P | Hersteller : IXYS |
 Description: MOSFET N-CH 900V 12A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH12N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH12N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH12N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Polarisation: unipolar Gate charge: 56nC On-state resistance: 1Ω Drain current: 12A Power dissipation: 380W Drain-source voltage: 900V Case: TO247-3 Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |