IXFN56N90P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 92.17 EUR |
| 10+ | 70.42 EUR |
| 100+ | 68.40 EUR |
Produktrezensionen
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Technische Details IXFN56N90P Littelfuse Inc.
Description: MOSFET N-CH 900V 56A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 3mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXFN56N90P nach Preis ab 80.82 EUR bis 92.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN56N90P | Hersteller : IXYS |
 MOSFET Modules PolarHV HiPerFETs 900V 56A |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN56N90P Produktcode: 101753
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IXFN56N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhancement Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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IXFN56N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhancement Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Mechanical mounting: screw Type of module: MOSFET transistor |
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