auf Bestellung 300 Stücke:
Lieferzeit 719-733 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 142.51 EUR |
| 10+ | 129.56 EUR |
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Technische Details IXFN56N90P IXYS
Description: MOSFET N-CH 900V 56A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 3mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXFN56N90P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN56N90P Produktcode: 101753 |
 Transistoren > Transistoren IGBT, LeistungsmoduleZCODE: 8541290010 |
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IXFN56N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 56A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN56N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 56A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN56N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 56A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN56N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN56N90P | Hersteller : IXYS |
Description: MOSFET N-CH 900V 56A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 3mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN56N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |