IXFN160N30T IXYS
Hersteller: IXYSDescription: MOSFET N-CH 300V 130A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 47.87 EUR |
| 10+ | 35.23 EUR |
| 100+ | 30.57 EUR |
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Technische Details IXFN160N30T IXYS
Description: MOSFET N-CH 300V 130A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V, Power Dissipation (Max): 900W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFN160N30T nach Preis ab 37.01 EUR bis 48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN160N30T | Hersteller : IXYS |
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auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN160N30T Produktcode: 162434
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Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 130A Pulsed drain current: 444A Power dissipation: 900W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 19mΩ Gate charge: 376nC Kind of channel: enhancement Reverse recovery time: 200ns Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
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