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IXXH80N65B4 IXXH80N65B4 IXYS ds100527b%28ixxh80n65b4%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 7307 Stücke:
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2+14.27 EUR
30+8.41 EUR
120+7.13 EUR
510+6.48 EUR
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS ds100528c%28ixxh80n65b4h1%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Produkt ist nicht verfügbar
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
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IXXH110N65C4 IXXH110N65C4 IXYS ds100497c%28ixxh110n65c4%29.pdf Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
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IXXK110N65B4H1 IXXK110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
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IXXK160N65C4 IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
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IXXX160N65C4 IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
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IXXK160N65B4 IXXK160N65B4 IXYS Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 263 Stücke:
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IXXX160N65B4 IXXX160N65B4 IXYS Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
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IXXK200N65B4 IXXK200N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf Description: IGBT 650V 370A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
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IXXX200N65B4 IXXX200N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf Description: IGBT 650V 370A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
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SLFL-M-WHT SLFL-M-WHT IXYS SLFL-M-WHT_Web.pdf Description: FLASHLIGHT LED AAA(1)
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IXBF10N300C IXBF10N300C IXYS Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
Produkt ist nicht verfügbar
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IXBF15N300C IXBF15N300C IXYS DS100536(IXBF15N300C).pdf Description: IGBT 3000V 37A 300W ISOPLUSI4
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MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXYH20N65C3 IXYH20N65C3 IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Description: IGBT PT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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IXYP15N65C3 IXYP15N65C3 IXYS littelfuse-discrete-igbts-ixyp15n65c3-datasheet?assetguid=4e5f3cf0-bc61-483c-9e5d-ee31587de80b Description: IGBT PT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
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IXYP10N65C3 IXYP10N65C3 IXYS Description: IGBT PT 650V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS Description: IGBT 900V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
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IXYK140N90C3 IXYK140N90C3 IXYS Description: IGBT 900V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
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IXYH80N90C3 IXYH80N90C3 IXYS Description: IGBT 900V 165A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
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120+13.94 EUR
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IXTA44P15TTRL IXTA44P15TTRL IXYS DS100023B(IXTA-TH-TQ-TP44P15T).pdf Description: MOSFET P-CH 150V 44A TO-263
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IXTY12N06TTRL IXTY12N06TTRL IXYS Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY12N06TTRL IXTY12N06TTRL IXYS Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CLA110MB1200NA CLA110MB1200NA IXYS media?resourcetype=datasheets&itemid=5273bfdd-e298-47c6-9c11-8f868e71d9d0&filename=Littelfuse-Power-Semiconductors-CLA110MB1200NA-Datasheet Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
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CLA30E1200HB CLA30E1200HB IXYS Littelfuse-Power-Semiconductors-CLA30E1200HB-Datasheet?assetguid=e5a919d0-df83-4f7b-913c-d9845e6ef7f6 Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
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C0E1200PBLA3 C0E1200PBLA3 IXYS CLA30E1200PB.pdf Description: SCR 1.2KV 47A TO220AB
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CLA30E1200PC CLA30E1200PC IXYS CLA30E1200PC.pdf Description: THYRISTOR PHASE 1200V TO-263
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CLA40P1200FC CLA40P1200FC IXYS Littelfuse-Power-Semiconductors-CLA40P1200FC-Datasheet?assetguid=72f159c6-408a-4e9a-a154-07b4fda33420 Description: SCR MODULE 1.2KV 63A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
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CLA5E1200UC CLA5E1200UC IXYS CLA5E1200UC.pdf Description: THYRISTOR PHASE 1200V TO-252
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CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Description: TRIAC 1.2KV 66A TO-247
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CLA60MT1200NTZ-TUB CLA60MT1200NTZ-TUB IXYS CLA60MT1200NTZ.pdf Description: TRIAC 1.2KV 66A TO-268AA
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CLA60PD1200NA CLA60PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA60PD1200NA-Datasheet?assetguid=2f0b1188-ebcf-43a4-97aa-f3cb8f1ddcdc Description: SCR MODULE 1.2KV 94A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
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CLA80E1200HF CLA80E1200HF IXYS media?resourcetype=datasheets&itemid=f217bcf4-024a-43c9-8152-4bd306c33ce3&filename=Littelfuse-Power-Semiconductors-CLA80E1200HF-Datasheet Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
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CMA30P1600FC IXYS CMA30P1600FC.pdf Description: MOD THYRISTOR DUAL 1600V I4-PAC
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CMA50P1600FC CMA50P1600FC IXYS Littelfuse-Power-Semiconductors-CMA50P1600FC-Datasheet?assetguid=217761c4-28ee-4a8f-acc4-895ff6c1f343 Description: SCR MODULE 1.6KV 79A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
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CMA80PD1600NA CMA80PD1600NA IXYS CMA80PD1600NA.pdf Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
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CS20-25MOT1 CS20-25MOT1 IXYS CS20-25moT1.pdf Description: THYRISTOR PHASE 2500V TO-263AA
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DH2x60-18A DH2x60-18A IXYS DH2x60-18A.pdf Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
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DH2x61-16A IXYS DH2x61-16A.pdf Description: DIODE MODULE 1.6KV 60A SOT227B
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DH60-14A DH60-14A IXYS DH60-14A.pdf Description: DIODE GEN PURP 1.4KV 60A TO247AD
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1+19.8 EUR
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DH60-16A DH60-16A IXYS DH60-14A.pdf Description: DIODE GEN PURP 1.6KV 60A TO247AD
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DHG10I1800PA DHG10I1800PA IXYS DHG10I1800PA.pdf Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
Produkt ist nicht verfügbar
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DLA100B1200LB IXYS DLA100B1200LB.pdf Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
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DLA100B1200LB-TRR IXYS DLA100B1200LB.pdf Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
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DLA20IM800PC-TUB DLA20IM800PC-TUB IXYS media?resourcetype=datasheets&itemid=feae5da8-f0de-4fad-a722-52d76b4edca3&filename=Littelfuse-Power-Semiconductors-DLA20IM800PC-Datasheet Description: DIODE GEN PURP 800V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1039 Stücke:
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4+5.17 EUR
50+2.83 EUR
100+2.59 EUR
500+2.15 EUR
1000+2.06 EUR
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DLA40IM800PC DLA40IM800PC IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263
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DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
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DLA60I1200HA DLA60I1200HA IXYS DLA60I1200HA.pdf Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Produkt ist nicht verfügbar
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DMA10I1600PA DMA10I1600PA IXYS media?resourcetype=datasheets&itemid=2b155cff-031c-4638-8388-a50ff2b97f25&filename=Littelfuse-Power-Semiconductors-DMA10I1600PA-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
auf Bestellung 299 Stücke:
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100+2.06 EUR
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DMA150E1600NA DMA150E1600NA IXYS Littelfuse-Power-Semiconductors-DMA150E1600NA-Datasheet?assetguid=416b55a7-dd50-4cd8-8c26-c5c7c9b91a5c Description: DIODE STD 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
auf Bestellung 176 Stücke:
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1+56.04 EUR
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100+39.31 EUR
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DMA150YA1600NA DMA150YA1600NA IXYS media?resourcetype=datasheets&itemid=da46da20-5058-4cb1-8c75-ae82685fc6e5&filename=Littelfuse-Power-Semiconductors-DMA150YA1600NA-Datasheet Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 58 Stücke:
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1+36.92 EUR
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DMA150YC1600NA DMA150YC1600NA IXYS media?resourcetype=datasheets&itemid=2b2f1b79-2ab0-4301-9ba7-bf85060f5226&filename=Littelfuse-Power-Semiconductors-DMA150YC1600NA-Datasheet Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 192 Stücke:
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1+50.95 EUR
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100+36.83 EUR
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DMA30E1800HA IXYS DMA30E1800HA.pdf Description: DIODE GEN PURP 1800V 30A TO247
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DMA90U1800LB IXYS DMA90U1800LB.pdf Description: DIODE RECTIFER TRIPLE 1800V SMPD
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DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 227 Stücke:
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2+14.61 EUR
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100+10.43 EUR
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DNA30E2200PA DNA30E2200PA IXYS media?resourcetype=datasheets&itemid=42adbfd3-2825-42ce-8fe6-b73bb77fbe1c&filename=Littelfuse-Power-Semiconductors-DNA30E2200PA-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 612 Stücke:
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500+4.47 EUR
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IXXH80N65B4 ds100527b%28ixxh80n65b4%29.pdf
IXXH80N65B4
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 7307 Stücke:
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Anzahl Preis
2+14.27 EUR
30+8.41 EUR
120+7.13 EUR
510+6.48 EUR
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IXXH80N65B4H1 ds100528c%28ixxh80n65b4h1%29.pdf
IXXH80N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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IXXN110N65C4H1 Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF
IXXN110N65C4H1
Hersteller: IXYS
Description: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
auf Bestellung 231 Stücke:
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1+45.07 EUR
10+33.07 EUR
100+28.44 EUR
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IXXH110N65C4 ds100497c%28ixxh110n65c4%29.pdf
IXXH110N65C4
Hersteller: IXYS
Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
auf Bestellung 595 Stücke:
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Anzahl Preis
1+21.21 EUR
30+12.93 EUR
120+11.12 EUR
510+10.87 EUR
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IXXN110N65B4H1 littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae
IXXN110N65B4H1
Hersteller: IXYS
Description: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
auf Bestellung 200 Stücke:
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1+44.69 EUR
10+32.77 EUR
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IXXK110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXK110N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
auf Bestellung 4 Stücke:
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IXXX110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXX110N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
Produkt ist nicht verfügbar
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IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
IXXK160N65C4
Hersteller: IXYS
Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
IXXX160N65C4
Hersteller: IXYS
Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXK160N65B4
IXXK160N65B4
Hersteller: IXYS
Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 263 Stücke:
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1+40.15 EUR
25+26.3 EUR
100+24.33 EUR
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IXXX160N65B4
IXXX160N65B4
Hersteller: IXYS
Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 807 Stücke:
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Anzahl Preis
1+40.66 EUR
30+26.16 EUR
120+24.73 EUR
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IXXK200N65B4 littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf
IXXK200N65B4
Hersteller: IXYS
Description: IGBT 650V 370A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
Produkt ist nicht verfügbar
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IXXX200N65B4 littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf
IXXX200N65B4
Hersteller: IXYS
Description: IGBT 650V 370A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
auf Bestellung 531 Stücke:
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Anzahl Preis
1+42.49 EUR
30+35.22 EUR
120+33.02 EUR
510+28.18 EUR
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SLFL-M-WHT SLFL-M-WHT_Web.pdf
SLFL-M-WHT
Hersteller: IXYS
Description: FLASHLIGHT LED AAA(1)
Produkt ist nicht verfügbar
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IXBF10N300C
IXBF10N300C
Hersteller: IXYS
Description: IGBT 3000V 29A 240W ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 32ns/390ns
Switching Energy: 7.2mJ (on), 1.04mJ (off)
Test Condition: 1500V, 10A, 10Ohm, 15V
Gate Charge: 208 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 240 W
Produkt ist nicht verfügbar
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IXBF15N300C DS100536(IXBF15N300C).pdf
IXBF15N300C
Hersteller: IXYS
Description: IGBT 3000V 37A 300W ISOPLUSI4
Produkt ist nicht verfügbar
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXYH20N65C3 littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYH20N65C3
Hersteller: IXYS
Description: IGBT PT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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IXYP15N65C3 littelfuse-discrete-igbts-ixyp15n65c3-datasheet?assetguid=4e5f3cf0-bc61-483c-9e5d-ee31587de80b
IXYP15N65C3
Hersteller: IXYS
Description: IGBT PT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
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IXYP10N65C3
IXYP10N65C3
Hersteller: IXYS
Description: IGBT PT 650V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXYH40N90C3D1
IXYH40N90C3D1
Hersteller: IXYS
Description: IGBT 900V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.92 EUR
30+11.99 EUR
120+10.25 EUR
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IXYK140N90C3
IXYK140N90C3
Hersteller: IXYS
Description: IGBT 900V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
auf Bestellung 367 Stücke:
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Anzahl Preis
1+47.4 EUR
25+31.37 EUR
100+29.64 EUR
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IXYH80N90C3
IXYH80N90C3
Hersteller: IXYS
Description: IGBT 900V 165A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
auf Bestellung 1083 Stücke:
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Anzahl Preis
1+26.19 EUR
30+16.14 EUR
120+13.94 EUR
510+13.91 EUR
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IXTA44P15TTRL DS100023B(IXTA-TH-TQ-TP44P15T).pdf
IXTA44P15TTRL
Hersteller: IXYS
Description: MOSFET P-CH 150V 44A TO-263
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IXTY12N06TTRL
IXTY12N06TTRL
Hersteller: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY12N06TTRL
IXTY12N06TTRL
Hersteller: IXYS
Description: MOSFET N-CH 60V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Description: SCR MODULE 1.2KV 150A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 150 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CLA110MB1200NA media?resourcetype=datasheets&itemid=5273bfdd-e298-47c6-9c11-8f868e71d9d0&filename=Littelfuse-Power-Semiconductors-CLA110MB1200NA-Datasheet
CLA110MB1200NA
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1200V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 110 A
Voltage - Off State: 1.2 kV
auf Bestellung 282 Stücke:
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1+37.86 EUR
10+28.38 EUR
100+25.63 EUR
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CLA30E1200HB Littelfuse-Power-Semiconductors-CLA30E1200HB-Datasheet?assetguid=e5a919d0-df83-4f7b-913c-d9845e6ef7f6
CLA30E1200HB
Hersteller: IXYS
Description: SCR 1.2KV 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.56 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247AD
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
auf Bestellung 141 Stücke:
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Anzahl Preis
2+8.89 EUR
30+5.01 EUR
120+4.16 EUR
Mindestbestellmenge: 2
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C0E1200PBLA3 CLA30E1200PB.pdf
C0E1200PBLA3
Hersteller: IXYS
Description: SCR 1.2KV 47A TO220AB
Produkt ist nicht verfügbar
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CLA30E1200PC CLA30E1200PC.pdf
CLA30E1200PC
Hersteller: IXYS
Description: THYRISTOR PHASE 1200V TO-263
Produkt ist nicht verfügbar
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CLA40P1200FC Littelfuse-Power-Semiconductors-CLA40P1200FC-Datasheet?assetguid=72f159c6-408a-4e9a-a154-07b4fda33420
CLA40P1200FC
Hersteller: IXYS
Description: SCR MODULE 1.2KV 63A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
auf Bestellung 228 Stücke:
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Anzahl Preis
1+24.64 EUR
25+15.45 EUR
100+13.26 EUR
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CLA5E1200UC CLA5E1200UC.pdf
CLA5E1200UC
Hersteller: IXYS
Description: THYRISTOR PHASE 1200V TO-252
Produkt ist nicht verfügbar
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CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Hersteller: IXYS
Description: TRIAC 1.2KV 66A TO-247
Produkt ist nicht verfügbar
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CLA60MT1200NTZ-TUB CLA60MT1200NTZ.pdf
CLA60MT1200NTZ-TUB
Hersteller: IXYS
Description: TRIAC 1.2KV 66A TO-268AA
Produkt ist nicht verfügbar
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CLA60PD1200NA Littelfuse-Power-Semiconductors-CLA60PD1200NA-Datasheet?assetguid=2f0b1188-ebcf-43a4-97aa-f3cb8f1ddcdc
CLA60PD1200NA
Hersteller: IXYS
Description: SCR MODULE 1.2KV 94A SOT-227-4
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 94 A
Voltage - Off State: 1.2 kV
auf Bestellung 280 Stücke:
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Anzahl Preis
1+48.96 EUR
10+36.02 EUR
100+31.25 EUR
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CLA80E1200HF media?resourcetype=datasheets&itemid=f217bcf4-024a-43c9-8152-4bd306c33ce3&filename=Littelfuse-Power-Semiconductors-CLA80E1200HF-Datasheet
CLA80E1200HF
Hersteller: IXYS
Description: SCR 1.2KV 126A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 38 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 900A, 970A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.77 V
Current - Off State (Max): 50 µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.2 kV
auf Bestellung 29 Stücke:
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Anzahl Preis
1+17.69 EUR
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CMA30P1600FC CMA30P1600FC.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1600V I4-PAC
Produkt ist nicht verfügbar
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CMA50P1600FC Littelfuse-Power-Semiconductors-CMA50P1600FC-Datasheet?assetguid=217761c4-28ee-4a8f-acc4-895ff6c1f343
CMA50P1600FC
Hersteller: IXYS
Description: SCR MODULE 1.6KV 79A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
auf Bestellung 248 Stücke:
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Anzahl Preis
1+26.59 EUR
25+16.89 EUR
100+14.59 EUR
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CMA80PD1600NA CMA80PD1600NA.pdf
CMA80PD1600NA
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1600V SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1070A, 1160A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CS20-25MOT1 CS20-25moT1.pdf
CS20-25MOT1
Hersteller: IXYS
Description: THYRISTOR PHASE 2500V TO-263AA
Produkt ist nicht verfügbar
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DH2x60-18A DH2x60-18A.pdf
DH2x60-18A
Hersteller: IXYS
Description: DIODE MOD GP 1800V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.01 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Produkt ist nicht verfügbar
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DH2x61-16A DH2x61-16A.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 60A SOT227B
Produkt ist nicht verfügbar
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DH60-14A DH60-14A.pdf
DH60-14A
Hersteller: IXYS
Description: DIODE GEN PURP 1.4KV 60A TO247AD
auf Bestellung 20 Stücke:
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Anzahl Preis
1+19.8 EUR
10+17.9 EUR
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DH60-16A DH60-14A.pdf
DH60-16A
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 60A TO247AD
Produkt ist nicht verfügbar
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DHG10I1800PA DHG10I1800PA.pdf
DHG10I1800PA
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
Produkt ist nicht verfügbar
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DLA100B1200LB DLA100B1200LB.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Produkt ist nicht verfügbar
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DLA100B1200LB-TRR DLA100B1200LB.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Produkt ist nicht verfügbar
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DLA20IM800PC-TUB media?resourcetype=datasheets&itemid=feae5da8-f0de-4fad-a722-52d76b4edca3&filename=Littelfuse-Power-Semiconductors-DLA20IM800PC-Datasheet
DLA20IM800PC-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 800V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1039 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
50+2.83 EUR
100+2.59 EUR
500+2.15 EUR
1000+2.06 EUR
Mindestbestellmenge: 4
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DLA40IM800PC DLA40IM800PC.pdf
DLA40IM800PC
Hersteller: IXYS
Description: DIODE GEN PURP 800V 40A TO263
Produkt ist nicht verfügbar
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DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Hersteller: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
Produkt ist nicht verfügbar
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DLA60I1200HA DLA60I1200HA.pdf
DLA60I1200HA
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Produkt ist nicht verfügbar
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DMA10I1600PA media?resourcetype=datasheets&itemid=2b155cff-031c-4638-8388-a50ff2b97f25&filename=Littelfuse-Power-Semiconductors-DMA10I1600PA-Datasheet
DMA10I1600PA
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
50+2.5 EUR
100+2.06 EUR
Mindestbestellmenge: 6
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DMA150E1600NA Littelfuse-Power-Semiconductors-DMA150E1600NA-Datasheet?assetguid=416b55a7-dd50-4cd8-8c26-c5c7c9b91a5c
DMA150E1600NA
Hersteller: IXYS
Description: DIODE STD 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 400V, 1MHz
Current - Average Rectified (Io): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 150 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+56.04 EUR
10+42.06 EUR
100+39.31 EUR
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DMA150YA1600NA media?resourcetype=datasheets&itemid=da46da20-5058-4cb1-8c75-ae82685fc6e5&filename=Littelfuse-Power-Semiconductors-DMA150YA1600NA-Datasheet
DMA150YA1600NA
Hersteller: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.92 EUR
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DMA150YC1600NA media?resourcetype=datasheets&itemid=2b2f1b79-2ab0-4301-9ba7-bf85060f5226&filename=Littelfuse-Power-Semiconductors-DMA150YC1600NA-Datasheet
DMA150YC1600NA
Hersteller: IXYS
Description: DIODE MOD GP 1600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 50 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.95 EUR
10+38.78 EUR
100+36.83 EUR
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DMA30E1800HA DMA30E1800HA.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1800V 30A TO247
Produkt ist nicht verfügbar
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DMA90U1800LB DMA90U1800LB.pdf
Hersteller: IXYS
Description: DIODE RECTIFER TRIPLE 1800V SMPD
Produkt ist nicht verfügbar
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DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC
Packaging: Tube
Package / Case: TO-251-2, IPAK
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: i4-PAC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.61 EUR
25+11.65 EUR
100+10.43 EUR
Mindestbestellmenge: 2
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DNA30E2200PA media?resourcetype=datasheets&itemid=42adbfd3-2825-42ce-8fe6-b73bb77fbe1c&filename=Littelfuse-Power-Semiconductors-DNA30E2200PA-Datasheet
DNA30E2200PA
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
50+5.86 EUR
100+5.03 EUR
500+4.47 EUR
Mindestbestellmenge: 3
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