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IXXH60N65C4

IXXH60N65C4 Littelfuse


media.pdf Hersteller: Littelfuse
Trans IGBT Chip N-CH 650V 118A 455000mW 3-Pin(3+Tab) TO-247AD
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Technische Details IXXH60N65C4 Littelfuse

Description: IGBT PT 650V 118A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 37ns/133ns, Switching Energy: 3.2mJ (on), 830µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 118 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 455 W.

Weitere Produktangebote IXXH60N65C4

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IXXH60N65C4 IXXH60N65C4 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Anzahl je Verpackung: 1 Stücke
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IXXH60N65C4 IXXH60N65C4 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixxh60n65c4_datasheet.pdf.pdf Description: IGBT PT 650V 118A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
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IXXH60N65C4 IXXH60N65C4 Hersteller : IXYS media-3321275.pdf IGBTs 650V/118A TRENCH IGBT GENX4 XPT
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IXXH60N65C4 IXXH60N65C4 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9C1CB239E3820&compId=IXXH60N65C4.pdf?ci_sign=2d606bf4989e65bc1f4779e26a9db028b66a64b7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 260A
Turn-on time: 110ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH