Produkte > IXX

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXX0107100UTQFP
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
IXX0107100UT
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
IXX0107100UTQFP
auf Bestellung 3800 Stücke:
Lieferzeit 21-28 Tag (e)
IXX016960007+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IXX016960007+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IXXA30N65C3HVIXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXA30N65C3HVIXYSDescription: IGBT
Produkt ist nicht verfügbar
IXXA50N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXA50N60B3LittelfuseTrans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXXA50N60B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Produkt ist nicht verfügbar
IXXA50N60B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXA50N60B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH100N60B3LittelfuseTrans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
9+18.15 EUR
10+ 15.92 EUR
Mindestbestellmenge: 9
IXXH100N60B3IXYSIGBT Transistors XPT IGBT B3-Class 600V/210Amp
auf Bestellung 260 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.99 EUR
10+ 31.43 EUR
30+ 28.42 EUR
60+ 27.4 EUR
120+ 26.31 EUR
270+ 25.87 EUR
510+ 25.82 EUR
Mindestbestellmenge: 2
IXXH100N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH100N60B3IXYSDescription: IGBT 600V 220A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 830 W
auf Bestellung 16 Stücke:
Lieferzeit 21-28 Tag (e)
1+37.21 EUR
IXXH100N60B3LittelfuseTrans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH100N60B3LittelfuseTrans IGBT Chip N-CH 600V 220A 830000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH100N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Produkt ist nicht verfügbar
IXXH100N60C3IXYSDescription: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)
1+42.56 EUR
IXXH100N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Produkt ist nicht verfügbar
IXXH100N60C3IXYSIGBT Transistors XPT IGBT C3-Class 600V/190Amp
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
2+42.87 EUR
10+ 38.51 EUR
30+ 37.93 EUR
60+ 36.79 EUR
120+ 35 EUR
Mindestbestellmenge: 2
IXXH100N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH110N65B4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXXH110N65B4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/146ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 570 A
Power - Max: 880 W
Produkt ist nicht verfügbar
IXXH110N65C4IXYSIGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
auf Bestellung 343 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.42 EUR
10+ 22.62 EUR
30+ 20.54 EUR
120+ 18.82 EUR
270+ 17.73 EUR
510+ 15.47 EUR
1020+ 14.64 EUR
Mindestbestellmenge: 2
IXXH110N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 160ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXXH110N65C4LittelfuseTrans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3+Tab) TO-247AD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH110N65C4LittelfuseTrans IGBT Chip N-CH 650V 234A 880000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH110N65C4IXYSDescription: IGBT 650V 234A 880W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
auf Bestellung 572 Stücke:
Lieferzeit 21-28 Tag (e)
1+26.18 EUR
30+ 20.91 EUR
120+ 18.71 EUR
510+ 16.51 EUR
IXXH110N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 160ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
2+ 35.75 EUR
6+ 11.91 EUR
IXXH110N65C4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXXH110N65C4 - IGBT, 235 A, 2.06 V, 880 W, 650 V, TO-247AD, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 650
Verlustleistung: 880
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 235
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Sättigungsspannung: 2.06
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH140N65B4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
Produkt ist nicht verfügbar
IXXH140N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH140N65B4IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXXH140N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Produkt ist nicht verfügbar
IXXH140N65C4IXYSIGBT Transistors IGBT XPT
Produkt ist nicht verfügbar
IXXH140N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Produkt ist nicht verfügbar
IXXH140N65C4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
Produkt ist nicht verfügbar
IXXH140N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH140N65C4LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXH150N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.18 EUR
9+ 8.27 EUR
10+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3IXYSDescription: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 602 Stücke:
Lieferzeit 21-28 Tag (e)
1+28.42 EUR
30+ 22.69 EUR
120+ 20.3 EUR
510+ 17.91 EUR
IXXH150N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.18 EUR
9+ 8.27 EUR
10+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3LittelfuseTrans IGBT Chip N-CH 600V 300A 1360000mW
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH150N60C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
2+28.65 EUR
10+ 28.63 EUR
Mindestbestellmenge: 2
IXXH30N60B3LittelfuseTrans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH30N60B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXH30N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Produkt ist nicht verfügbar
IXXH30N60B3IXYSDescription: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
Produkt ist nicht verfügbar
IXXH30N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH30N60B3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXXH30N60B3D1 - IGBT, 60 A, 1.66 V, 270 W, 600 V, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.66V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 270W
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH30N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.32 EUR
10+ 7.15 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1IXYSDescription: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 1373 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.61 EUR
30+ 17.26 EUR
120+ 15.44 EUR
510+ 13.62 EUR
1020+ 12.26 EUR
Mindestbestellmenge: 2
IXXH30N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.32 EUR
10+ 7.15 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH30N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH30N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
11+14.65 EUR
12+ 12.67 EUR
25+ 10.24 EUR
Mindestbestellmenge: 11
IXXH30N60B3D1IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 194 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.79 EUR
10+ 18.67 EUR
30+ 16.93 EUR
120+ 15.55 EUR
270+ 14.64 EUR
510+ 12.84 EUR
Mindestbestellmenge: 3
IXXH30N60C3IXYSIGBT Transistors IGBT XPT
Produkt ist nicht verfügbar
IXXH30N60C3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
Produkt ist nicht verfügbar
IXXH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
16+9.93 EUR
19+ 8.16 EUR
25+ 7.71 EUR
Mindestbestellmenge: 16
IXXH30N60C3D1IXYSIGBT Transistors XPT 600V IGBT 30A
auf Bestellung 181 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.17 EUR
10+ 14.92 EUR
30+ 13.52 EUR
120+ 12.4 EUR
270+ 11.67 EUR
510+ 10.43 EUR
1020+ 9.39 EUR
Mindestbestellmenge: 4
IXXH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH30N60C3D1IXYSDescription: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.26 EUR
30+ 13.78 EUR
120+ 12.33 EUR
Mindestbestellmenge: 2
IXXH30N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
Produkt ist nicht verfügbar
IXXH30N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH30N65B4IXYSDescription: IGBT PT 650V 65A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.46 EUR
30+ 11.46 EUR
Mindestbestellmenge: 2
IXXH30N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
IXXH30N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH30N65B4IXYSIGBT Transistors 650V/65A Trench IGBT GenX4 XPT
auf Bestellung 381 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.56 EUR
10+ 12.25 EUR
30+ 9.39 EUR
120+ 8.79 EUR
1020+ 7.33 EUR
Mindestbestellmenge: 4
IXXH30N65B4LittelfuseTrans IGBT Chip N-CH 650V 70A 230000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH30N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
IXXH30N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH30N65B4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-247AD
Produkt ist nicht verfügbar
IXXH30N65B4D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXH30N65C4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
IXXH30N65C4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH30N65C4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-247AD
Produkt ist nicht verfügbar
IXXH40N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.28 EUR
11+ 6.55 EUR
14+ 5.22 EUR
15+ 4.93 EUR
Mindestbestellmenge: 10
IXXH40N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.28 EUR
11+ 6.55 EUR
14+ 5.22 EUR
15+ 4.93 EUR
Mindestbestellmenge: 10
IXXH40N65B4IXYSIGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
IXXH40N65B4IXYSDescription: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
auf Bestellung 1050 Stücke:
Lieferzeit 21-28 Tag (e)
300+10.22 EUR
Mindestbestellmenge: 300
IXXH40N65B4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-247AD
Produkt ist nicht verfügbar
IXXH40N65B4D1IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 1.4mJ (on), 800µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
Produkt ist nicht verfügbar
IXXH40N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Produkt ist nicht verfügbar
IXXH40N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH40N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Produkt ist nicht verfügbar
IXXH40N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH40N65B4H1IXYSIGBT Transistors IGBT XPT-GENX4
Produkt ist nicht verfügbar
IXXH40N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 120A 455W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH40N65B4H1IXYSDescription: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Produkt ist nicht verfügbar
IXXH40N65C4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH40N65C4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-247AD
Produkt ist nicht verfügbar
IXXH40N65C4D1IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
auf Bestellung 540 Stücke:
Lieferzeit 21-28 Tag (e)
IXXH40N65C4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
IXXH50N60B3LittelfuseTrans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXH50N60B3IXYSDescription: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH50N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Produkt ist nicht verfügbar
IXXH50N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH50N60B3IXYSIGBT Transistors GenX3 600V XPT IGBTs
auf Bestellung 199 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.77 EUR
10+ 24.47 EUR
30+ 23.79 EUR
60+ 22.46 EUR
120+ 21.16 EUR
510+ 20.67 EUR
1020+ 20.07 EUR
Mindestbestellmenge: 2
IXXH50N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Produkt ist nicht verfügbar
IXXH50N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH50N60B3D1Ixys CorporationTrans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
30+18.39 EUR
240+ 16.52 EUR
480+ 15.03 EUR
720+ 13.79 EUR
Mindestbestellmenge: 30
IXXH50N60B3D1IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 300 Stücke:
Lieferzeit 336-350 Tag (e)
2+29.46 EUR
10+ 22.46 EUR
Mindestbestellmenge: 2
IXXH50N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH50N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH50N60B3D1IXYSDescription: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 175 Stücke:
Lieferzeit 21-28 Tag (e)
1+29.25 EUR
30+ 23.68 EUR
120+ 22.29 EUR
IXXH50N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH50N60C3IXYSIGBT Transistors XPT IGBT C3-Class 600V/100 Amp
Produkt ist nicht verfügbar
IXXH50N60C3IXYSDescription: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH50N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Produkt ist nicht verfügbar
IXXH50N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH50N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH50N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH50N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Produkt ist nicht verfügbar
IXXH50N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH50N60C3D1IXYSIGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
auf Bestellung 450 Stücke:
Lieferzeit 14-28 Tag (e)
2+30.58 EUR
10+ 27.14 EUR
30+ 25.51 EUR
60+ 24.96 EUR
510+ 21.32 EUR
1020+ 19.55 EUR
Mindestbestellmenge: 2
IXXH50N60C3D1IXYSDescription: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH60N60B4IXYSIGBT Transistors GenX3 600V XPT IGBTs
Produkt ist nicht verfügbar
IXXH60N60B4H1IXYSIGBT Transistors 40 Amps 900V 2.5 Rds
Produkt ist nicht verfügbar
IXXH60N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.12 EUR
11+ 6.55 EUR
12+ 6.19 EUR
Mindestbestellmenge: 8
IXXH60N65B4IXYSIGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
IXXH60N65B4IXYSDescription: IGBT 650V 116A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
auf Bestellung 1230 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.9 EUR
10+ 16.2 EUR
100+ 13.5 EUR
500+ 11.91 EUR
1000+ 10.72 EUR
Mindestbestellmenge: 2
IXXH60N65B4LittelfuseTrans IGBT Chip N-CH 650V 145A 536000mW 3-Pin(3+Tab) TO-247AD
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH60N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.12 EUR
11+ 6.55 EUR
12+ 6.19 EUR
Mindestbestellmenge: 8
IXXH60N65B4H1IXYSIGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
auf Bestellung 117 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.19 EUR
Mindestbestellmenge: 2
IXXH60N65B4H1IXYSDescription: IGBT 650V 116A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
auf Bestellung 210 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.3 EUR
30+ 25.34 EUR
120+ 23.85 EUR
IXXH60N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 116A 455mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH60N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.43 EUR
6+ 12.13 EUR
7+ 11.47 EUR
Mindestbestellmenge: 5
IXXH60N65B4H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXXH60N65B4H1 - IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 650
Verlustleistung: 455
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 60
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.2
Betriebstemperatur, max.: 175
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXXH60N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.43 EUR
6+ 12.13 EUR
7+ 11.47 EUR
Mindestbestellmenge: 5
IXXH60N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH60N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 116A 455mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH60N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
IXXH60N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH60N65C4LittelfuseTrans IGBT Chip N-CH 650V 118A 455000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH60N65C4IXYSIGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
IXXH60N65C4IXYSDescription: IGBT 650V 118A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Produkt ist nicht verfügbar
IXXH75N60B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXH75N60B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXXH75N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 160A 750000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH75N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
IXXH75N60B3D1IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.37 EUR
10+ 32.34 EUR
Mindestbestellmenge: 2
IXXH75N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH75N60B3D1IXYSDescription: IGBT 600V 160A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 1200 Stücke:
Lieferzeit 21-28 Tag (e)
1+32.14 EUR
30+ 26.01 EUR
120+ 24.48 EUR
510+ 22.18 EUR
1020+ 20.35 EUR
IXXH75N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 165ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
IXXH75N60C3IXYSIGBT Transistors XPT 600V IGBT GenX3 Power Device
Produkt ist nicht verfügbar
IXXH75N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 165ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH75N60C3IXYSDescription: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXXH75N60C3D1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXH75N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 185ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH75N60C3D1IXYSDescription: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.41 EUR
IXXH75N60C3D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXH75N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 185ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
IXXH80N65B4LittelfuseTrans IGBT Chip N-CH 650V 160A 625mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH80N65B4LITTELFUSEDescription: LITTELFUSE - IXXH80N65B4 - TRANSISTOR, IGBT, 650V, 160A, TO-247AD
Kollektor-Emitter-Spannung, max.: 650
Verlustleistung: 625
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 160
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Sättigungsspannung: 1.65
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4 Series
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXXH80N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Produkt ist nicht verfügbar
IXXH80N65B4IXYSIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
auf Bestellung 1187 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.37 EUR
10+ 18.3 EUR
30+ 16.61 EUR
120+ 15.24 EUR
270+ 15.03 EUR
Mindestbestellmenge: 3
IXXH80N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH80N65B4IXYSDescription: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 2108 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.19 EUR
30+ 16.93 EUR
120+ 15.15 EUR
510+ 13.36 EUR
1020+ 12.03 EUR
2010+ 11.27 EUR
Mindestbestellmenge: 2
IXXH80N65B4LittelfuseTrans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH80N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Produkt ist nicht verfügbar
IXXH80N65B4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-247AD
Produkt ist nicht verfügbar
IXXH80N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH80N65B4D1IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.14 EUR
30+ 21.97 EUR
120+ 20.67 EUR
510+ 18.74 EUR
IXXH80N65B4D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXH80N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH80N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXH80N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
IXXH80N65B4H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXXH80N65B4H1 - IGBT, 160 A, 1.65 V, 625 W, 650 V, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 625W
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pins
Produktpalette: XPT GenX4
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 160A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH80N65B4H1IXYSIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
auf Bestellung 300 Stücke:
Lieferzeit 503-517 Tag (e)
2+35.39 EUR
10+ 26.21 EUR
Mindestbestellmenge: 2
IXXH80N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH80N65B4H1IXYSDescription: IGBT 650V 160A 625W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
1+34.76 EUR
30+ 28.14 EUR
IXXH80N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXXK100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
IXXK100N60B3H1IXYSIGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked
Produkt ist nicht verfügbar
IXXK100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK100N60B3H1IXYSDescription: IGBT PT 600V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
1+61.31 EUR
25+ 50.83 EUR
100+ 47.66 EUR
IXXK100N60B3H1LittelfuseTrans IGBT Chip N-CH 600V 200A 695000mW 3-Pin TO-264
Produkt ist nicht verfügbar
IXXK100N60C3H1IXYSIGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked
auf Bestellung 194 Stücke:
Lieferzeit 14-28 Tag (e)
1+61.75 EUR
10+ 57.51 EUR
25+ 48.85 EUR
100+ 47.97 EUR
250+ 45.79 EUR
500+ 41.21 EUR
IXXK100N60C3H1IXYSDescription: IGBT PT 600V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
auf Bestellung 270 Stücke:
Lieferzeit 21-28 Tag (e)
1+61.31 EUR
25+ 50.83 EUR
100+ 47.66 EUR
IXXK100N60C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK100N60C3H1LittelfuseTrans IGBT Chip N-CH 600V 170A 695000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXXK100N60C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
IXXK100N75B4H1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-264(3)
Produkt ist nicht verfügbar
IXXK110N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXXK110N65B4H1IXYSIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
auf Bestellung 584 Stücke:
Lieferzeit 14-28 Tag (e)
2+43.39 EUR
10+ 38.25 EUR
25+ 36.17 EUR
50+ 35.13 EUR
100+ 33.05 EUR
250+ 30.89 EUR
Mindestbestellmenge: 2
IXXK110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
IXXK110N65B4H1IXYSDescription: IGBT 650V 240A 880W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
Produkt ist nicht verfügbar
IXXK110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK160N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
IXXK160N65B4IXYSDescription: IGBT 650V 310A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 11 Stücke:
Lieferzeit 21-28 Tag (e)
1+46.25 EUR
IXXK160N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK160N65B4IXYSIGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
IXXK160N65C4IXYSIGBT Transistors 650V/290A Trench IGBT GenX4 XPT
Produkt ist nicht verfügbar
IXXK160N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
IXXK160N65C4IXYSDescription: IGBT 650V 290A 940W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
IXXK160N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK200N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Produkt ist nicht verfügbar
IXXK200N60B3IXYSDescription: IGBT 600V 380A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
IXXK200N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK200N60B3LittelfuseTrans IGBT Chip N-CH 600V 380A 1630000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXXK200N60B3IXYSIGBT Transistors GenX3 XPT 600V
Produkt ist nicht verfügbar
IXXK200N60C3IXYSDescription: IGBT 600V 340A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
IXXK200N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK200N60C3LittelfuseTrans IGBT Chip N-CH 600V 340A 1630000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXXK200N60C3IXYSIGBT Transistors XPT 600V IGBT GenX3
Produkt ist nicht verfügbar
IXXK200N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Produkt ist nicht verfügbar
IXXK200N65B4IXYSIGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
auf Bestellung 659 Stücke:
Lieferzeit 14-28 Tag (e)
1+60.87 EUR
10+ 56.13 EUR
25+ 52.55 EUR
100+ 50.57 EUR
250+ 49.58 EUR
500+ 48.36 EUR
1000+ 43.73 EUR
IXXK200N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
Produkt ist nicht verfügbar
IXXK200N65B4LittelfuseTrans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXXK200N65B4IXYSDescription: IGBT 650V 370A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
Produkt ist nicht verfügbar
IXXK200N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK200N65B4LittelfuseTrans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXXK300N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Produkt ist nicht verfügbar
IXXK300N60B3IXYSDescription: IGBT 600V 550A 2300W TO264
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
IXXK300N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXK300N60B3LittelfuseTrans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXXK300N60B3IXYSIGBT Transistors XPT 600V IGBT 300A
auf Bestellung 62 Stücke:
Lieferzeit 14-28 Tag (e)
1+84.89 EUR
10+ 76.78 EUR
IXXK300N60C3LittelfuseTrans IGBT Chip N-CH 600V 510A 2300000mW 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXXK300N60C3IXYSIGBT Transistors XPT 600V IGBT 300A
Produkt ist nicht verfügbar
IXXK300N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Produkt ist nicht verfügbar
IXXK300N60C3IXYSDescription: IGBT 600V 510A 2300W TO264
Produkt ist nicht verfügbar
IXXK300N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN100N60B3H1LittelfuseTrans IGBT Module N-CH 600V
Produkt ist nicht verfügbar
IXXN100N60B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXXN100N60B3H1IXYSDescription: IGBT MOD 600V 170A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V
Produkt ist nicht verfügbar
IXXN100N60B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN100N60B3H1LittelfuseTrans IGBT Module N-CH 600V
Produkt ist nicht verfügbar
IXXN100N60B3H1IXYSIGBT Transistors XPT 600V IGBT GenX3 w/Diode
auf Bestellung 58 Stücke:
Lieferzeit 14-28 Tag (e)
1+87.78 EUR
10+ 78.21 EUR
20+ 73.55 EUR
50+ 71.08 EUR
100+ 68.64 EUR
500+ 63.13 EUR
IXXN110N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXXN110N65B4H1IXYSIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
auf Bestellung 60 Stücke:
Lieferzeit 14-28 Tag (e)
1+77.92 EUR
10+ 67.89 EUR
IXXN110N65B4H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXXN110N65B4H1IXYSDescription: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
Produkt ist nicht verfügbar
IXXN110N65B4H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN110N65C4H1IXYSIGBT Modules 650V/234A Trench IGBT GenX4 XPT
auf Bestellung 300 Stücke:
Lieferzeit 434-448 Tag (e)
1+76.39 EUR
10+ 67.89 EUR
IXXN110N65C4H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
IXXN110N65C4H1LITTELFUSEDescription: LITTELFUSE - IXXN110N65C4H1 - TRANSISTOR, IGBT, 650V, 210A, SOT-227B
tariffCode: 85412900
Transistormontage: Panel
rohsCompliant: YES
IGBT-Technologie: -
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.06V
Dauer-Kollektorstrom: 210A
usEccn: EAR99
IGBT-Anschluss: Tab
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.06V
Verlustleistung Pd: 750W
euEccn: NLR
Verlustleistung: 750W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 650V
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Single
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 210A
Betriebstemperatur, max.: 175°C
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
IXXN110N65C4H1IXYSDescription: IGBT MOD 650V 210A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
Produkt ist nicht verfügbar
IXXN110N65C4H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN110N65C4H1LittelfuseTrans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
Produkt ist nicht verfügbar
IXXN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Produkt ist nicht verfügbar
IXXN200N60B3IXYSDescription: IGBT MOD 600V 280A 940W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
1+90.38 EUR
IXXN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN200N60B3IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
Produkt ist nicht verfügbar
IXXN200N60B3H1IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
Produkt ist nicht verfügbar
IXXN200N60B3H1LittelfuseIGBT Module, XPT 600V IGBT GenX3 w/Diode
Produkt ist nicht verfügbar
IXXN200N60B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Produkt ist nicht verfügbar
IXXN200N60B3H1IXYSDescription: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
Produkt ist nicht verfügbar
IXXN200N60B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN200N60C3H1LittelfuseTrans IGBT Module N-CH 600V 200A 780000mW
Produkt ist nicht verfügbar
IXXN200N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Produkt ist nicht verfügbar
IXXN200N60C3H1IXYSDescription: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
auf Bestellung 160 Stücke:
Lieferzeit 21-28 Tag (e)
10+113.9 EUR
Mindestbestellmenge: 10
IXXN200N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN200N60C3H1IXYSIGBT Modules XPT 600V IGBT 98A
Produkt ist nicht verfügbar
IXXN200N65A4IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Technology: GenX4™; XPT™
Mechanical mounting: screw
Produkt ist nicht verfügbar
IXXN200N65A4IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Technology: GenX4™; XPT™
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN340N65B4IXYSIGBT Transistors IGBT XPT
Produkt ist nicht verfügbar
IXXN340N65B4LittelfuseIGBT Module, 650V IGBT Transistor
Produkt ist nicht verfügbar
IXXP12N65B4D1IXYSIGBT Transistors Disc IGBT XPT-GenX4 TO-220AB/FP
Produkt ist nicht verfügbar
IXXP12N65B4D1Littelfuse650V IGBT Transistor
Produkt ist nicht verfügbar
IXXP12N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
Produkt ist nicht verfügbar
IXXP12N65B4D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXP12N65B4D1IXYSDescription: IGBT 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 13ns/158ns
Switching Energy: 440µJ (on), 220µJ (off)
Test Condition: 400V, 12A, 20Ohm, 15V
Gate Charge: 34 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 160 W
Produkt ist nicht verfügbar
IXXP50N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXP50N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXP50N60B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXP50N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Produkt ist nicht verfügbar
IXXQ30N60B3MIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
auf Bestellung 960 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.82 EUR
10+ 10.76 EUR
100+ 8.7 EUR
500+ 7.74 EUR
Mindestbestellmenge: 3
IXXQ30N60B3MIXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXQ30N60B3MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
Produkt ist nicht verfügbar
IXXQ30N60B3MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXR100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
IXXR100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXR100N60B3H1IXYSDescription: IGBT 600V 145A 400W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
Produkt ist nicht verfügbar
IXXR100N60B3H1LittelfuseTrans IGBT Chip N-CH 600V 145A 400000mW 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXXR100N60B3H1IXYSIGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
Produkt ist nicht verfügbar
IXXR110N65B4H1IXYSDescription: IGBT 650V 150A 455W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
auf Bestellung 28 Stücke:
Lieferzeit 21-28 Tag (e)
1+50.21 EUR
IXXR110N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXXR110N65B4H1IXYSIGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
auf Bestellung 540 Stücke:
Lieferzeit 14-28 Tag (e)
2+50.57 EUR
10+ 44.56 EUR
30+ 40.92 EUR
120+ 38.51 EUR
270+ 34.97 EUR
510+ 33.75 EUR
Mindestbestellmenge: 2
IXXR110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
IXXR110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXT100N75B4HVIXYSIGBT Transistors IGBT DISCRETE
Produkt ist nicht verfügbar
IXXT100N75B4HVIXYSDescription: IGBT DISCRETE TO-268HV
Packaging: Tube
Produkt ist nicht verfügbar
IXXX100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
IXXX100N60B3H1IXYSDescription: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
Produkt ist nicht verfügbar
IXXX100N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX100N60B3H1IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXX100N60C3H1IXYSDescription: IGBT 600V 170A 695W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
Produkt ist nicht verfügbar
IXXX100N60C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX100N60C3H1IXYSIGBT Transistors GenX3 w/Diode XPT 600V
Produkt ist nicht verfügbar
IXXX100N60C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
IXXX100N60C3H1LittelfuseTrans IGBT Chip N-CH 600V 170A 695000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX100N75B4H1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXXX110N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Produkt ist nicht verfügbar
IXXX110N65B4H1LittelfuseTrans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX110N65B4H1IXYSDescription: IGBT 650V 240A 880W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
Produkt ist nicht verfügbar
IXXX110N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX110N65B4H1IXYSIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
2+44.38 EUR
Mindestbestellmenge: 2
IXXX140N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Produkt ist nicht verfügbar
IXXX140N65B4H1IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
Produkt ist nicht verfügbar
IXXX140N65B4H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX140N65B4H1IXYSIGBT Transistors IGBT XPT-GENX4
auf Bestellung 3 Stücke:
Lieferzeit 14-28 Tag (e)
2+50.54 EUR
10+ 44.54 EUR
30+ 43.34 EUR
60+ 40.56 EUR
120+ 39.26 EUR
270+ 35.91 EUR
510+ 34.4 EUR
Mindestbestellmenge: 2
IXXX160N65B4IXYSIGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
auf Bestellung 331 Stücke:
Lieferzeit 14-28 Tag (e)
2+46.8 EUR
10+ 41.24 EUR
30+ 35.96 EUR
60+ 35.05 EUR
120+ 33.57 EUR
270+ 33.05 EUR
510+ 32.27 EUR
Mindestbestellmenge: 2
IXXX160N65B4LittelfuseTrans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX160N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar
IXXX160N65B4LittelfuseTrans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX160N65B4IXYSDescription: IGBT 650V 310A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 525 Stücke:
Lieferzeit 21-28 Tag (e)
1+46.46 EUR
30+ 37.6 EUR
120+ 35.39 EUR
510+ 32.07 EUR
IXXX160N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX160N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Produkt ist nicht verfügbar
IXXX160N65C4LittelfuseTrans IGBT Chip N-CH 650V 290A 940000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX160N65C4IXYSDescription: IGBT 650V 290A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
IXXX160N65C4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX160N65C4IXYSIGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
IXXX200N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
IXXX200N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX200N60B3IXYSIGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXX200N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
IXXX200N60B3LittelfuseTrans IGBT Chip N-CH 600V 380A 1630000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX200N60C3IXYSDescription: IGBT 600V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 47ns/125ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
1+62.35 EUR
10+ 57.51 EUR
IXXX200N60C3IXYSIGBT Transistors IGBT XPT-GENX3
auf Bestellung 7 Stücke:
Lieferzeit 14-28 Tag (e)
1+62.66 EUR
10+ 57.8 EUR
30+ 49.37 EUR
120+ 49.35 EUR
270+ 46.46 EUR
IXXX200N65B4LITTELFUSEDescription: LITTELFUSE - IXXX200N65B4 - IGBT, 480 A, 1.5 V, 1.63 kW, 650 V, PLUS247, 3 Pin(s)
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
IXXX200N65B4IXYSDescription: IGBT 650V 370A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
auf Bestellung 531 Stücke:
Lieferzeit 21-28 Tag (e)
1+62.76 EUR
30+ 52.04 EUR
120+ 48.78 EUR
510+ 41.63 EUR
IXXX200N65B4IXYSIGBT Transistors 650V/370A Trench IGBT GenX4 XPT
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
1+56.86 EUR
10+ 52.44 EUR
30+ 50.08 EUR
120+ 44.75 EUR
IXXX200N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
IXXX200N65B4LittelfuseTrans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX200N65B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX300N60B3IXYSIGBT Transistors XPT 600V IGBT 300A
auf Bestellung 360 Stücke:
Lieferzeit 466-480 Tag (e)
1+82.34 EUR
10+ 73.16 EUR
30+ 68.25 EUR
60+ 67.68 EUR
IXXX300N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
IXXX300N60B3LittelfuseTrans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX300N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX300N60B3LITTELFUSEDescription: LITTELFUSE - IXXX300N60B3 - TRANSISTOR, IGBT, 600V, 550A, PLUS247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 2.3
Anzahl der Pins: 3
Bauform - Transistor: PLUS247
Kollektor-Emitter-Sättigungsspannung: 1.3
Kollektorstrom: 550
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX3 Series
SVHC: To Be Advised
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
IXXX300N60B3IXYSDescription: IGBT 600V 550A 2300W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Part Status: Active
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
1+90.32 EUR
10+ 83.3 EUR
IXXX300N60B3LittelfuseTrans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX300N60C3IXYSDescription: IGBT 600V 510A 2300W TO247
Produkt ist nicht verfügbar
IXXX300N60C3IXYSIGBT Transistors XPT 600V IGBT 300A
Produkt ist nicht verfügbar
IXXX300N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
IXXX300N60C3LittelfuseTrans IGBT Chip N-CH 600V 510A 2300000mW 3-Pin(3+Tab) PLUS 247
Produkt ist nicht verfügbar
IXXX300N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar