IXXK160N65C4 IXYS
Hersteller: IXYS
Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
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Technische Details IXXK160N65C4 IXYS
Description: IGBT PT 650V 290A TO-264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A, Supplier Device Package: TO-264 (IXXK), IGBT Type: PT, Td (on/off) @ 25°C: 52ns/197ns, Switching Energy: 3.5mJ (on), 1.3mJ (off), Test Condition: 400V, 80A, 1Ohm, 15V, Gate Charge: 422 nC, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 800 A, Power - Max: 940 W.
Weitere Produktangebote IXXK160N65C4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXXK160N65C4 | Hersteller : IXYS |
 IGBTs 650V/290A Trench IGBT GenX4 XPT |
Produkt ist nicht verfügbar |
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| IXXK160N65C4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Power dissipation: 940W Case: TO264 Mounting: THT Gate charge: 422nC Kind of package: tube Pulsed collector current: 320A Collector-emitter voltage: 650V Technology: GenX4™; XPT™ Turn-on time: 52ns Turn-off time: 197ns Gate-emitter voltage: ±20V Collector current: 160A |
Produkt ist nicht verfügbar |