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IXXP12N65B4D1 Littelfuse


media.pdf Hersteller: Littelfuse
650V IGBT Transistor
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Technische Details IXXP12N65B4D1 Littelfuse

Description: IGBT 650V 38A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 13ns/158ns, Switching Energy: 440µJ (on), 220µJ (off), Test Condition: 400V, 12A, 20Ohm, 15V, Gate Charge: 34 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 70 A, Power - Max: 160 W.

Weitere Produktangebote IXXP12N65B4D1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IXXP12N65B4D1 IXXP12N65B4D1 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
Anzahl je Verpackung: 1 Stücke
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IXXP12N65B4D1 IXXP12N65B4D1 Hersteller : IXYS littelfuse-discrete-igbts-ixxp12n65b4d1-datasheet?assetguid=77f74189-aa1a-463a-87c8-3ea583a41ea7 Description: IGBT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 13ns/158ns
Switching Energy: 440µJ (on), 220µJ (off)
Test Condition: 400V, 12A, 20Ohm, 15V
Gate Charge: 34 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 160 W
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IXXP12N65B4D1 IXXP12N65B4D1 Hersteller : IXYS media-3321257.pdf IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP
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IXXP12N65B4D1 IXXP12N65B4D1 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE458FEB7591820&compId=IXXP12N65B4D1.pdf?ci_sign=249f71380b36ecccc89266db49385297cce44081 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 70A
Turn-on time: 44ns
Turn-off time: 245ns
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH