Technische Details IXXX160N65C4 Littelfuse
Description: IGBT 650V 290A 940W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 52ns/197ns, Switching Energy: 3.5mJ (on), 1.3mJ (off), Test Condition: 400V, 80A, 1Ohm, 15V, Gate Charge: 422 nC, Part Status: Active, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 800 A, Power - Max: 940 W.
Weitere Produktangebote IXXX160N65C4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXXX160N65C4 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns Anzahl je Verpackung: 1 Stücke |
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IXXX160N65C4 | Hersteller : IXYS |
Description: IGBT 650V 290A 940W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/197ns Switching Energy: 3.5mJ (on), 1.3mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 422 nC Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 800 A Power - Max: 940 W |
Produkt ist nicht verfügbar |
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IXXX160N65C4 | Hersteller : IXYS |
IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT |
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| IXXX160N65C4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns |
Produkt ist nicht verfügbar |