IXXA50N60B3 IXYS
Hersteller: IXYS
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
300+ | 8.56 EUR |
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Technische Details IXXA50N60B3 IXYS
Description: IGBT 600V 120A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 27ns/150ns, Switching Energy: 670µJ (on), 1.2mJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.
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![]() Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 600W Case: TO263 Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
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![]() Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 600W Case: TO263 Mounting: SMD Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V |
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