IXXH40N65B4D1 IXYS
Hersteller: IXYS
Description: IGBT 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 1.4mJ (on), 800µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
Description: IGBT 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 1.4mJ (on), 800µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
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Technische Details IXXH40N65B4D1 IXYS
Description: IGBT 650V 115A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/115ns, Switching Energy: 1.4mJ (on), 800µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 66 nC, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 455 W.
Weitere Produktangebote IXXH40N65B4D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXXH40N65B4D1 | Hersteller : IXYS |
 IGBTs Disc IGBT XPT-GenX4 TO-247AD |
Produkt ist nicht verfügbar |
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IXXH40N65B4D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns Technology: GenX4™; Trench; XPT™ |
Produkt ist nicht verfügbar |