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IXXN100N60B3H1

IXXN100N60B3H1 IXYS


media-3320516.pdf Hersteller: IXYS
IGBT Transistors XPT 600V IGBT GenX3 w/Diode
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100+ 46.46 EUR
500+ 42.73 EUR
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Technische Details IXXN100N60B3H1 IXYS

Description: IGBT MOD 600V 170A 500W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V.

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IXXN100N60B3H1 IXXN100N60B3H1 Hersteller : Littelfuse ttelfuse_discrete_igbts_xpt_ixxn100n60b3h1_datasheet.pdf.pdf Trans IGBT Module N-CH 600V
Produkt ist nicht verfügbar
IXXN100N60B3H1 IXXN100N60B3H1 Hersteller : IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXN100N60B3H1 IXXN100N60B3H1 Hersteller : IXYS media?resourcetype=datasheets&itemid=47891445-af8a-43a9-9f34-723f21f780fd&filename=littelfuse_discrete_igbts_xpt_ixxn100n60b3h1_datasheet.pdf Description: IGBT MOD 600V 170A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V
Produkt ist nicht verfügbar
IXXN100N60B3H1 IXXN100N60B3H1 Hersteller : IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar