IXXH75N60C3 IXYS
Hersteller: IXYSDescription: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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Technische Details IXXH75N60C3 IXYS
Description: IGBT PT 600V 150A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 35ns/90ns, Switching Energy: 1.6mJ (on), 800µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 107 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Weitere Produktangebote IXXH75N60C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IXXH75N60C3 | Hersteller : IXYS |
IGBTs XPT 600V IGBT GenX3 Power Device |
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IXXH75N60C3 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 105ns Turn-off time: 165ns Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |

