MMIX1F360N15T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
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Technische Details MMIX1F360N15T2 IXYS
Description: MOSFET N-CH 150V 235A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 235A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Weitere Produktangebote MMIX1F360N15T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
MMIX1F360N15T2 | IXYS |
MOSFETs SMPD MOSFETs Power Device |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 235A Power dissipation: 680W Case: SMPD Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 715nC Reverse recovery time: 150ns Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F360N15T2 |
![]() |
Hersteller: IXYS
MOSFETs SMPD MOSFETs Power Device
MOSFETs SMPD MOSFETs Power Device
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F360N15T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 235A
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 715nC
Reverse recovery time: 150ns
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


