MMIX1F360N15T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
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Technische Details MMIX1F360N15T2 IXYS
Description: MOSFET N-CH 150V 235A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 235A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Weitere Produktangebote MMIX1F360N15T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
MMIX1F360N15T2 | IXYS |
MOSFETs SMPD MOSFETs Power Device |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Pulsed drain current: 900A Power dissipation: 680W Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 235A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.4mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F360N15T2 |
![]() |
Hersteller: IXYS
MOSFETs SMPD MOSFETs Power Device
MOSFETs SMPD MOSFETs Power Device
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F360N15T2 |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


