IXFP5N100PM IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 2.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.39 EUR |
| 10+ | 12.63 EUR |
| 50+ | 10.16 EUR |
| 100+ | 9.37 EUR |
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Technische Details IXFP5N100PM IXYS
Description: MOSFET N-CH 1000V 2.3A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXFP5N100PM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFP5N100PM | IXYS |
MOSFETs TO220 1KV 5A N-CH POLAR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP5N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 2.3A Power dissipation: 42W Case: TO220-3 Gate-source voltage: 30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 33.4nC Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFP5N100PM |
|
Hersteller: IXYS
MOSFETs TO220 1KV 5A N-CH POLAR
MOSFETs TO220 1KV 5A N-CH POLAR
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP5N100PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 2.3A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 33.4nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2.3A; 42W; TO220-3; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 2.3A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 33.4nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH