IXYH20N65C3 IXYS
Hersteller: IXYS
Description: IGBT PT 650V 50A TO-247
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 230 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 430µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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Technische Details IXYH20N65C3 IXYS
Description: IGBT PT 650V 50A TO-247, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 230 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 50 A, Gate Charge: 30 nC, Test Condition: 400V, 20A, 20Ohm, 15V, Switching Energy: 430µJ (on), 350µJ (off), Td (on/off) @ 25°C: 19ns/80ns, IGBT Type: PT, Supplier Device Package: TO-247 (IXTH), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole.
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IXYH20N65C3 | IXYS |
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IXYH20N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 132ns Gate-emitter voltage: ±20V Turn-on time: 51ns Collector current: 20A Pulsed collector current: 105A Collector-emitter voltage: 650V Gate charge: 30nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH20N65C3 |
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Hersteller: IXYS
IGBTs TO263 650V 20A XPT
IGBTs TO263 650V 20A XPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH20N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Turn-on time: 51ns
Collector current: 20A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Turn-on time: 51ns
Collector current: 20A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH