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IXTH76N25T IXTH76N25T IXYS DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf Description: MOSFET N-CH 250V 76A TO247
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IXTH86N20T IXTH86N20T IXYS Description: MOSFET N-CH 200V 86A TO-247
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IXTH98N20T IXTH98N20T IXYS Description: MOSFET N-CH 200V 98A TO-247
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IXTJ36N20 IXTJ36N20 IXYS 98859.pdf Description: MOSFET N-CH 200V 36A TO-247AD
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IXTK110N30 IXTK110N30 IXYS Description: MOSFET N-CH 300V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
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IXTK120N25 IXTK120N25 IXYS Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
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IXTK128N15 IXTK128N15 IXYS Description: MOSFET N-CH 150V 128A TO264
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
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IXTK160N20 IXTK160N20 IXYS Description: MOSFET N-CH 200V 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
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IXTK180N15 IXTK180N15 IXYS Description: MOSFET N-CH 150V 180A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXTK21N100 IXTK21N100 IXYS Description: MOSFET N-CH 1000V 21A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK33N50 IXTK33N50 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtk33n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 33A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXTK62N25 IXTK62N25 IXYS Description: MOSFET N-CH 250V 62A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXTK75N30 IXTK75N30 IXYS Description: MOSFET N-CH 300V 75A TO264
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
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IXTK80N25 IXTK80N25 IXYS Description: MOSFET N-CH 250V 80A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK8N150L IXTK8N150L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf Description: MOSFET N-CH 1500V 8A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 8V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXTK90N15 IXTK90N15 IXYS Description: MOSFET N-CH 150V 90A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN120N25 IXTN120N25 IXYS Description: MOSFET N-CH 250V 120A SOT227B
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
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IXTN36N50 IXTN36N50 IXYS Description: MOSFET N-CH 500V 36A SOT227B
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN79N20 IXTN79N20 IXYS Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
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IXTP120N075T2 IXTP120N075T2 IXYS IXTP120N075T2.pdf Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
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IXTP120P065T IXTP120P065T IXYS littelfuse-discrete-mosfets-ixt-120p065t-datasheet?assetguid=15f284ef-9657-4925-b296-4f60552beceb Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTP130N065T2 IXTP130N065T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta130n065t2_datasheet.pdf.pdf Description: MOSFET N-CH 65V 130A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
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IXTP140N055T2 IXTP140N055T2 IXYS 140N055littelfusediscretemosfetsnchanneltrenchgate.pdf Description: MOSFET N-CH 55V 140A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
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IXTP15N20T IXTP15N20T IXYS Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
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IXTP160N04T2 IXTP160N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
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IXTP230N075T2 IXTP230N075T2 IXYS IXTA230N075T2.pdf Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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100+6.75 EUR
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IXTP24N15T IXTP24N15T IXYS Description: MOSFET N-CH 150V 24A TO220AB
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IXTP27N20T IXTP27N20T IXYS Description: MOSFET N-CH 200V 27A TO220AB
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IXTP36N20T IXTP36N20T IXYS Description: MOSFET N-CH 200V 36A TO-220
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IXTP36N30T IXTP36N30T IXYS Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTP38N15T IXTP38N15T IXYS Description: MOSFET N-CH 150V 38A TO-220
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IXTP3N110 IXTP3N110 IXYS IXT(A,P)3N110,120.pdf Description: MOSFET N-CH 1100V 3A TO-220
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IXTP42N15T IXTP42N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_42n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 42A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
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IXTP44N15T IXTP44N15T IXYS Description: MOSFET N-CH 150V 44A TO-220
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IXTP44N25T IXTP44N25T IXYS Description: MOSFET N-CH 250V 44A TO220AB
Drain to Source Voltage (Vdss): 250 V
Part Status: Active
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTP44N30T IXTP44N30T IXYS Description: MOSFET N-CH 300V 44A TO-220
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IXTP50N25T IXTP50N25T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-50N25T-Datasheet.PDF?assetguid=D7F19B2B-0219-4B0C-A29D-B093518EE586 Description: MOSFET N-CH 250V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTP54N30T IXTP54N30T IXYS Description: MOSFET N-CH 300V 54A TO-220
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IXTP56N15T IXTP56N15T IXYS IXT(A,P)56N15T.pdf Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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IXTP72N20T IXTP72N20T IXYS Description: MOSFET N-CH 200V 72A TO-220
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IXTP74N15T IXTP74N15T IXYS Description: MOSFET N-CH 150V 74A TO-220
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IXTP76N25T IXTP76N25T IXYS DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTQ102N25T IXTQ102N25T IXYS Description: MOSFET N-CH 250V 102A TO-3P
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IXTQ120N15T IXTQ120N15T IXYS Description: MOSFET N-CH 150V 120A TO3P
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IXTQ130N15T IXTQ130N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
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IXTQ30N50L IXTQ30N50L IXYS media?resourcetype=datasheets&itemid=AFA68DD6-A9EF-4467-9201-24C3F574A68F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50L-Datasheet.PDF Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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IXTQ30N60L2 IXTQ30N60L2 IXYS DS100101IXTHTQTT30N60L2.pdf Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTQ36N20T IXTQ36N20T IXYS Description: MOSFET N-CH 200V TO-3P
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IXTQ44N30T IXTQ44N30T IXYS Description: MOSFET N-CH 300V 44A TO-3P
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IXTQ48N20T IXTQ48N20T IXYS Description: MOSFET N-CH 200V 48A TO3P
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IXTQ54N30T IXTQ54N30T IXYS Description: MOSFET N-CH 300V 54A TO-3P
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IXTQ56N15T IXTQ56N15T IXYS Description: MOSFET N-CH 150V 56A TO-3P
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IXTQ60N30T IXTQ60N30T IXYS Description: MOSFET N-CH 300V 60A TO3P
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 300 V
Part Status: Active
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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IXTQ62N25T IXTQ62N25T IXYS Description: MOSFET N-CH 250V 62A TO3P
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Supplier Device Package: TO-3P
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IXTQ72N20T IXTQ72N20T IXYS Description: MOSFET N-CH 200V 72A TO-3P
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IXTQ72N30T IXTQ72N30T IXYS Description: MOSFET N-CH 300V 72A TO-3P
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IXTQ74N15T IXTQ74N15T IXYS Description: MOSFET N-CH 150V 74A TO-3P
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IXTQ76N25T IXTQ76N25T IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-76N25T-Datasheet.PDF?assetguid=3C2A340B-21A2-4C11-9ADB-97D2BDE80F94 Description: MOSFET N-CH 250V 76A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 271 Stücke:
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30+9.53 EUR
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IXTQ80N28T IXTQ80N28T IXYS DS99355B(IXTQ80N28T).pdf Description: MOSFET N-CH 280V 80A TO-3P
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IXTQ86N20T IXTQ86N20T IXYS DS99664A(IXTA-TP-TQ86N20T).pdf Description: MOSFET N-CH 200V 86A TO3P
auf Bestellung 1080 Stücke:
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IXTH76N25T DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf
IXTH76N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 76A TO247
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXTH86N20T
IXTH86N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 86A TO-247
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IXTH98N20T
IXTH98N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 98A TO-247
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IXTJ36N20 98859.pdf
IXTJ36N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 36A TO-247AD
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IXTK110N30
IXTK110N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 110A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
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IXTK120N25
IXTK120N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK128N15
IXTK128N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 128A TO264
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar
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IXTK160N20
IXTK160N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 415 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
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IXTK180N15
IXTK180N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 180A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK21N100
IXTK21N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 21A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK33N50 littelfuse_discrete_mosfets_n-channel_standard_ixtk33n50_datasheet.pdf.pdf
IXTK33N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 33A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK62N25
IXTK62N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 62A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK75N30
IXTK75N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 75A TO264
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Produkt ist nicht verfügbar
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IXTK80N25
IXTK80N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 80A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK8N150L littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf
IXTK8N150L
Hersteller: IXYS
Description: MOSFET N-CH 1500V 8A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 8V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 5 Stücke:
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AnzahlPrivatkunde
1+78.46 EUR
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IXTK90N15
IXTK90N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 90A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN120N25
IXTN120N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A SOT227B
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
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IXTN36N50
IXTN36N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A SOT227B
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN79N20
IXTN79N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP120N075T2 IXTP120N075T2.pdf
IXTP120N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.81 EUR
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IXTP120P065T littelfuse-discrete-mosfets-ixt-120p065t-datasheet?assetguid=15f284ef-9657-4925-b296-4f60552beceb
IXTP120P065T
Hersteller: IXYS
Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP130N065T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta130n065t2_datasheet.pdf.pdf
IXTP130N065T2
Hersteller: IXYS
Description: MOSFET N-CH 65V 130A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Produkt ist nicht verfügbar
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IXTP140N055T2 140N055littelfusediscretemosfetsnchanneltrenchgate.pdf
IXTP140N055T2
Hersteller: IXYS
Description: MOSFET N-CH 55V 140A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IXTP15N20T
IXTP15N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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IXTP160N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_160n04t2_datasheet.pdf.pdf
IXTP160N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP230N075T2 IXTA230N075T2.pdf
IXTP230N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.61 EUR
50+7.35 EUR
100+6.75 EUR
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IXTP24N15T
IXTP24N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 24A TO220AB
Produkt ist nicht verfügbar
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IXTP27N20T
IXTP27N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 27A TO220AB
Produkt ist nicht verfügbar
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IXTP36N20T
IXTP36N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 36A TO-220
Produkt ist nicht verfügbar
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IXTP36N30T
IXTP36N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP38N15T
IXTP38N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 38A TO-220
Produkt ist nicht verfügbar
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IXTP3N110 IXT(A,P)3N110,120.pdf
IXTP3N110
Hersteller: IXYS
Description: MOSFET N-CH 1100V 3A TO-220
Produkt ist nicht verfügbar
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IXTP42N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_42n15t_datasheet.pdf.pdf
IXTP42N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 42A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Produkt ist nicht verfügbar
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IXTP44N15T
IXTP44N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 44A TO-220
Produkt ist nicht verfügbar
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IXTP44N25T
IXTP44N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Drain to Source Voltage (Vdss): 250 V
Part Status: Active
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP44N30T
IXTP44N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 44A TO-220
Produkt ist nicht verfügbar
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IXTP50N25T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-50N25T-Datasheet.PDF?assetguid=D7F19B2B-0219-4B0C-A29D-B093518EE586
IXTP50N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.09 EUR
50+6.4 EUR
100+5.85 EUR
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IXTP54N30T
IXTP54N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 54A TO-220
Produkt ist nicht verfügbar
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IXTP56N15T IXT(A,P)56N15T.pdf
IXTP56N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP72N20T
IXTP72N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 72A TO-220
Produkt ist nicht verfügbar
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IXTP74N15T
IXTP74N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 74A TO-220
Produkt ist nicht verfügbar
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IXTP76N25T DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf
IXTP76N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.01 EUR
10+11.69 EUR
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IXTQ102N25T
IXTQ102N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 102A TO-3P
Produkt ist nicht verfügbar
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IXTQ120N15T
IXTQ120N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 120A TO3P
Produkt ist nicht verfügbar
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IXTQ130N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf
IXTQ130N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
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IXTQ30N50L media?resourcetype=datasheets&itemid=AFA68DD6-A9EF-4467-9201-24C3F574A68F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Linear-IXT-30N50L-Datasheet.PDF
IXTQ30N50L
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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IXTQ30N60L2 DS100101IXTHTQTT30N60L2.pdf
IXTQ30N60L2
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
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IXTQ36N20T
IXTQ36N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V TO-3P
Produkt ist nicht verfügbar
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IXTQ44N30T
IXTQ44N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 44A TO-3P
Produkt ist nicht verfügbar
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IXTQ48N20T
IXTQ48N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 48A TO3P
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+9.5 EUR
Mindestbestellmenge: 30 Stücke
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IXTQ54N30T
IXTQ54N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 54A TO-3P
Produkt ist nicht verfügbar
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IXTQ56N15T
IXTQ56N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 56A TO-3P
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IXTQ60N30T
IXTQ60N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 60A TO3P
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 300 V
Part Status: Active
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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IXTQ62N25T
IXTQ62N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 62A TO3P
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Supplier Device Package: TO-3P
Produkt ist nicht verfügbar
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IXTQ72N20T
IXTQ72N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 72A TO-3P
Produkt ist nicht verfügbar
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IXTQ72N30T
IXTQ72N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO-3P
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IXTQ74N15T
IXTQ74N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 74A TO-3P
Produkt ist nicht verfügbar
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IXTQ76N25T Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-76N25T-Datasheet.PDF?assetguid=3C2A340B-21A2-4C11-9ADB-97D2BDE80F94
IXTQ76N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 76A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.36 EUR
30+9.53 EUR
120+8.03 EUR
Mindestbestellmenge: 2 Stücke
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IXTQ80N28T DS99355B(IXTQ80N28T).pdf
IXTQ80N28T
Hersteller: IXYS
Description: MOSFET N-CH 280V 80A TO-3P
Produkt ist nicht verfügbar
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IXTQ86N20T DS99664A(IXTA-TP-TQ86N20T).pdf
IXTQ86N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 86A TO3P
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 30 Stücke
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