| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTN120N25 | IXYS |
Description: MOSFET N-CH 250V 120A SOT227B Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Drain to Source Voltage (Vdss): 250 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTN36N50 | IXYS |
Description: MOSFET N-CH 500V 36A SOT227B Drain to Source Voltage (Vdss): 500 V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 20mA Power Dissipation (Max): 400W (Tc) Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTN79N20 | IXYS |
Description: MOSFET N-CH 200V 85A SOT227B Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Drain to Source Voltage (Vdss): 200 V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 20mA Power Dissipation (Max): 400W (Tc) Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP120N075T2 | IXYS |
Description: MOSFET N-CH 75V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP120P065T | IXYS |
Description: MOSFET P-CH 65V 120A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP130N065T2 | IXYS |
Description: MOSFET N-CH 65V 130A TO220ABVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 65 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP140N055T2 | IXYS |
Description: MOSFET N-CH 55V 140A TO220ABVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 55 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP15N20T | IXYS |
Description: MOSFET N-CH 200V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drain to Source Voltage (Vdss): 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP160N04T2 | IXYS |
Description: MOSFET N-CH 40V 160A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP230N075T2 | IXYS |
Description: MOSFET N-CH 75V 230A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP24N15T | IXYS | Description: MOSFET N-CH 150V 24A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP27N20T | IXYS | Description: MOSFET N-CH 200V 27A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP36N20T | IXYS | Description: MOSFET N-CH 200V 36A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP36N30T | IXYS |
Description: MOSFET N-CH 300V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V Supplier Device Package: TO-220-3 Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP38N15T | IXYS | Description: MOSFET N-CH 150V 38A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP3N110 | IXYS |
Description: MOSFET N-CH 1100V 3A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP42N15T | IXYS |
Description: MOSFET N-CH 150V 42A TO220ABFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP44N15T | IXYS | Description: MOSFET N-CH 150V 44A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP44N25T | IXYS |
Description: MOSFET N-CH 250V 44A TO220AB Drain to Source Voltage (Vdss): 250 V Part Status: Active Supplier Device Package: TO-220-3 Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP44N30T | IXYS | Description: MOSFET N-CH 300V 44A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP50N25T | IXYS |
Description: MOSFET N-CH 250V 50A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP54N30T | IXYS | Description: MOSFET N-CH 300V 54A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP56N15T | IXYS |
Description: MOSFET N-CH 150V 56A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP72N20T | IXYS | Description: MOSFET N-CH 200V 72A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP74N15T | IXYS | Description: MOSFET N-CH 150V 74A TO-220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTP76N25T | IXYS |
Description: MOSFET N-CH 250V 76A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ102N25T | IXYS | Description: MOSFET N-CH 250V 102A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ120N15T | IXYS | Description: MOSFET N-CH 150V 120A TO3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ130N15T | IXYS |
Description: MOSFET N-CH 150V 130A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ30N50L | IXYS |
Description: MOSFET N-CH 500V 30A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ30N60L2 | IXYS |
Description: MOSFET N-CH 600V 30A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ36N20T | IXYS | Description: MOSFET N-CH 200V TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ44N30T | IXYS | Description: MOSFET N-CH 300V 44A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ48N20T | IXYS | Description: MOSFET N-CH 200V 48A TO3P |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ54N30T | IXYS | Description: MOSFET N-CH 300V 54A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ56N15T | IXYS | Description: MOSFET N-CH 150V 56A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ60N30T | IXYS |
Description: MOSFET N-CH 300V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Drain to Source Voltage (Vdss): 300 V Part Status: Active Supplier Device Package: TO-3P Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ62N25T | IXYS |
Description: MOSFET N-CH 250V 62A TO3P Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Drain to Source Voltage (Vdss): 250 V Supplier Device Package: TO-3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ72N20T | IXYS | Description: MOSFET N-CH 200V 72A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ72N30T | IXYS | Description: MOSFET N-CH 300V 72A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ74N15T | IXYS | Description: MOSFET N-CH 150V 74A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ80N28T | IXYS |
Description: MOSFET N-CH 280V 80A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ86N20T | IXYS |
Description: MOSFET N-CH 200V 86A TO3P |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ88N15 | IXYS | Description: MOSFET N-CH 150V 88A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ96N25T | IXYS |
Description: MOSFET N-CH 250V 96A TO3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ98N20T | IXYS | Description: MOSFET N-CH 200V 98A TO-3P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTR30N25 | IXYS |
Description: MOSFET N-CH 250V 25A ISOPLUS247 Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTT30N50L | IXYS |
Description: MOSFET N-CH 500V 30A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTT30N50L2 | IXYS |
Description: MOSFET N-CH 500V 30A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT40N50L2 | IXYS |
Description: MOSFET N-CH 500V 40A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT60N10 | IXYS |
Description: MOSFET N-CH 100V 60A TO268 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTT72N20 | IXYS |
Description: MOSFET N-CH 200V 72A TO-268 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
IXTT75N10 | IXYS |
Description: MOSFET N-CH 100V 75A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
IXTU05N100 | IXYS |
Description: MOSFET N-CH 1000V 750MA TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
IXTU08N100P | IXYS | Description: MOSFET N-CH 1000V 8A TO-251 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXTV102N25T | IXYS | Description: MOSFET N-CH 250V 102A PLUS220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXTV120N15T | IXYS | Description: MOSFET N-CH 150V 120A PLUS220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTV60N30T | IXYS |
Description: MOSFET N-CH 300V 60A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Supplier Device Package: PLUS220 Part Status: Active Drain to Source Voltage (Vdss): 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXTV72N30T | IXYS | Description: MOSFET N-CH 300V 72A PLUS220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| IXTV96N25T | IXYS |
Description: MOSFET N-CH 250V 96A PLUS220 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTN120N25 |
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A SOT227B
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Description: MOSFET N-CH 250V 120A SOT227B
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTN36N50 |
Hersteller: IXYS
Description: MOSFET N-CH 500V 36A SOT227B
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 500V 36A SOT227B
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTN79N20 |
Hersteller: IXYS
Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP120N075T2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.58 EUR |
| IXTP120P065T |
![]() |
Hersteller: IXYS
Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 65V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.06 EUR |
| 50+ | 8.76 EUR |
| 100+ | 8.06 EUR |
| IXTP130N065T2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 65V 130A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Description: MOSFET N-CH 65V 130A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP140N055T2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 55V 140A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET N-CH 55V 140A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP15N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP160N04T2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP230N075T2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 75V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.61 EUR |
| 50+ | 7.35 EUR |
| 100+ | 6.75 EUR |
| IXTP24N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 24A TO220AB
Description: MOSFET N-CH 150V 24A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP27N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 27A TO220AB
Description: MOSFET N-CH 200V 27A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP36N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 36A TO-220
Description: MOSFET N-CH 200V 36A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP36N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP38N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 38A TO-220
Description: MOSFET N-CH 150V 38A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| IXTP3N110 |
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Hersteller: IXYS
Description: MOSFET N-CH 1100V 3A TO-220
Description: MOSFET N-CH 1100V 3A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP42N15T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 150V 42A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Description: MOSFET N-CH 150V 42A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTP44N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 44A TO-220
Description: MOSFET N-CH 150V 44A TO-220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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Stück im Wert von UAH
| IXTP44N25T |
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Drain to Source Voltage (Vdss): 250 V
Part Status: Active
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 250V 44A TO220AB
Drain to Source Voltage (Vdss): 250 V
Part Status: Active
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP44N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 44A TO-220
Description: MOSFET N-CH 300V 44A TO-220
Produkt ist nicht verfügbar
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| IXTP50N25T |
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Hersteller: IXYS
Description: MOSFET N-CH 250V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 250V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.09 EUR |
| 50+ | 6.4 EUR |
| 100+ | 5.85 EUR |
| IXTP54N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 54A TO-220
Description: MOSFET N-CH 300V 54A TO-220
Produkt ist nicht verfügbar
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| IXTP56N15T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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| IXTP72N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 72A TO-220
Description: MOSFET N-CH 200V 72A TO-220
Produkt ist nicht verfügbar
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| IXTP74N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 74A TO-220
Description: MOSFET N-CH 150V 74A TO-220
Produkt ist nicht verfügbar
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| IXTP76N25T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.01 EUR |
| 10+ | 11.69 EUR |
| IXTQ102N25T |
Hersteller: IXYS
Description: MOSFET N-CH 250V 102A TO-3P
Description: MOSFET N-CH 250V 102A TO-3P
Produkt ist nicht verfügbar
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| IXTQ120N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 120A TO3P
Description: MOSFET N-CH 150V 120A TO3P
Produkt ist nicht verfügbar
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| IXTQ130N15T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
Produkt ist nicht verfügbar
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| IXTQ30N50L |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
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| IXTQ30N60L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Produkt ist nicht verfügbar
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| IXTQ36N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V TO-3P
Description: MOSFET N-CH 200V TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ44N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 44A TO-3P
Description: MOSFET N-CH 300V 44A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ48N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 48A TO3P
Description: MOSFET N-CH 200V 48A TO3P
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 9.5 EUR |
| IXTQ54N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 54A TO-3P
Description: MOSFET N-CH 300V 54A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ56N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 56A TO-3P
Description: MOSFET N-CH 150V 56A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ60N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 60A TO3P
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 300 V
Part Status: Active
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Description: MOSFET N-CH 300V 60A TO3P
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 300 V
Part Status: Active
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTQ62N25T |
Hersteller: IXYS
Description: MOSFET N-CH 250V 62A TO3P
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Supplier Device Package: TO-3P
Description: MOSFET N-CH 250V 62A TO3P
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Supplier Device Package: TO-3P
Produkt ist nicht verfügbar
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| IXTQ72N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 72A TO-3P
Description: MOSFET N-CH 200V 72A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ72N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO-3P
Description: MOSFET N-CH 300V 72A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ74N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 74A TO-3P
Description: MOSFET N-CH 150V 74A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ80N28T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 280V 80A TO-3P
Description: MOSFET N-CH 280V 80A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ86N20T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 200V 86A TO3P
Description: MOSFET N-CH 200V 86A TO3P
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
| IXTQ88N15 |
Hersteller: IXYS
Description: MOSFET N-CH 150V 88A TO-3P
Description: MOSFET N-CH 150V 88A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ96N25T |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 250V 96A TO3P
Description: MOSFET N-CH 250V 96A TO3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTQ98N20T |
Hersteller: IXYS
Description: MOSFET N-CH 200V 98A TO-3P
Description: MOSFET N-CH 200V 98A TO-3P
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTR30N25 |
Hersteller: IXYS
Description: MOSFET N-CH 250V 25A ISOPLUS247
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Description: MOSFET N-CH 250V 25A ISOPLUS247
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTT30N50L |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT30N50L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.86 EUR |
| 30+ | 25.76 EUR |
| 120+ | 22.46 EUR |
| IXTT40N50L2 |
![]() |
Hersteller: IXYS
Description: MOSFET N-CH 500V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.54 EUR |
| 30+ | 29.68 EUR |
| 120+ | 26 EUR |
| IXTT60N10 |
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Hersteller: IXYS
Description: MOSFET N-CH 100V 60A TO268
Description: MOSFET N-CH 100V 60A TO268
Produkt ist nicht verfügbar
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| IXTT72N20 |
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Hersteller: IXYS
Description: MOSFET N-CH 200V 72A TO-268
Description: MOSFET N-CH 200V 72A TO-268
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| IXTT75N10 |
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Hersteller: IXYS
Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTU05N100 |
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Hersteller: IXYS
Description: MOSFET N-CH 1000V 750MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Description: MOSFET N-CH 1000V 750MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 75 Stücke
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| IXTU08N100P |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 8A TO-251
Description: MOSFET N-CH 1000V 8A TO-251
Produkt ist nicht verfügbar
Mindestbestellmenge: 75 Stücke
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| IXTV102N25T |
Hersteller: IXYS
Description: MOSFET N-CH 250V 102A PLUS220
Description: MOSFET N-CH 250V 102A PLUS220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| IXTV120N15T |
Hersteller: IXYS
Description: MOSFET N-CH 150V 120A PLUS220
Description: MOSFET N-CH 150V 120A PLUS220
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXTV60N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 60A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: PLUS220
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Description: MOSFET N-CH 300V 60A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: PLUS220
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXTV72N30T |
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A PLUS220
Description: MOSFET N-CH 300V 72A PLUS220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| IXTV96N25T |
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Hersteller: IXYS
Description: MOSFET N-CH 250V 96A PLUS220
Description: MOSFET N-CH 250V 96A PLUS220
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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