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IXTK8N150L

IXTK8N150L IXYS

littelfuse_discrete_mosfets_n-channel_linear_ixt_8n150l_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1500V 8A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 8V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.93 EUR
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Technische Details IXTK8N150L IXYS

Description: MOSFET N-CH 1500V 8A TO264, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 8V @ 250µA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.

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IXTK8N150L IXTK8N150L Hersteller : IXYS media-3321888.pdf MOSFET 8 Amps 1500V
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.07 EUR
10+59.77 EUR
25+52.15 EUR
50+51.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH