IXTK75N30 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 300V 75A TO264
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK75N30 IXYS
Description: MOSFET N-CH 300V 75A TO264, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V.
Weitere Produktangebote IXTK75N30
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IXTK75N30 | IXYS |
MOSFET 75 Amps 300V 0.042 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTK75N30 |
![]() |
Hersteller: IXYS
MOSFET 75 Amps 300V 0.042 Rds
MOSFET 75 Amps 300V 0.042 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH



