IXTN120N25 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A SOT227B
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
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Technische Details IXTN120N25 IXYS
Description: MOSFET N-CH 250V 120A SOT227B, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 730W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V.
Weitere Produktangebote IXTN120N25
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTN120N25 | Hersteller : IXYS |
 Discrete Semiconductor Modules 120 Amps 250V 0.02 Rds |
Produkt ist nicht verfügbar |