| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH80N65X2 | IXYS |
Description: MOSFET N-CH 650V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V |
auf Bestellung 5288 Stücke: Lieferzeit 10-14 Tag (e) |
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IXCY10M90S-TRL | IXYS |
Description: IC CURRENT REGULATOR TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 900V Current - Output: 100mA Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-252AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXCY10M90S-TRL | IXYS |
Description: IC CURRENT REGULATOR TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 900V Current - Output: 100mA Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-252AA |
auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSG60N65L2K | IXYS |
Description: 650V 40M (40A @ 25C) SIC MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXSG60N65L2K | IXYS |
Description: 650V 40M (40A @ 25C) SIC MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSA60N65L2-7TR | IXYS |
Description: 650V 40M (80A @ 25C) SIC MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXSA60N65L2-7TR | IXYS |
Description: 650V 40M (80A @ 25C) SIC MOSFETPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSH60N65L2KHV | IXYS |
Description: 650V 40M (40A @ 25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP36N30P | IXYS |
Description: MOSFET N-CH 300V 36A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH30N50Q3 | IXYS |
Description: MOSFET N-CH 500V 30A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 413 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH30N50P | IXYS |
Description: MOSFET N-CH 500V 30A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXFK140N30P | IXYS |
Description: MOSFET N-CH 300V 140A TO264AAPackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V |
auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1N120P | IXYS |
Description: MOSFET N-CH 1200V 1A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 1728 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH96P085T | IXYS |
Description: MOSFET P-CH 85V 96A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
auf Bestellung 2449 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH68P20T | IXYS |
Description: MOSFET P-CH 200V 68A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V |
auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP72N30X3 | IXYS |
Description: MOSFET N-CH 300V 72A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT11P50 | IXYS |
Description: MOSFET P-CH 500V 11A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN210N30X3 | IXYS |
Description: MOSFET N-CH 300V 210A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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GUO40-12NO1 | IXYS |
Bridge Rectifiers 40 Amps 1200V |
auf Bestellung 1880 Stücke: Lieferzeit 10-14 Tag (e) |
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FBE22-06N1 | IXYS |
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO190-08NO7 | IXYS |
Bridge Rectifiers 190 Amps 800V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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VUB72-16NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO160-08NO7 | IXYS |
Bridge Rectifiers 160 Amps 800V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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GBO25-12NO1 | IXYS |
Bridge Rectifiers 25 Amps 1600V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO190-12NO7 | IXYS |
Bridge Rectifiers 190 Amps 1200V |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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VUE75-06NO7 | IXYS |
Bridge Rectifiers 75 Amps 600V |
auf Bestellung 1168 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE100-06NO7 | IXYS |
Bridge Rectifiers 100 Amps 600V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO86-16NO7 | IXYS |
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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FUO50-16N | IXYS |
Bridge Rectifiers 50 Amps 1600V |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE60-06A | IXYS |
Bridge Rectifiers 60 Amps 600V |
auf Bestellung 622 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO35-12NO7 | IXYS |
Bridge Rectifiers 35 Amps 1200V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO121-16NO1 | IXYS |
Bridge Rectifiers 121 Amps 1600V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO34-18NO1 | IXYS |
Bridge Rectifiers 34 Amps 1800V |
auf Bestellung 116 Stücke: Lieferzeit 10-14 Tag (e) |
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VUB72-12NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO110-16NO7 | IXYS |
Bridge Rectifiers 110 Amps 1600V |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FBS16-06SC | IXYS |
Bridge Rectifiers 16 Amps 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUE130-12NO7 | IXYS |
Bridge Rectifiers 130 Amps 1200V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO125-12NO7 | IXYS |
Bridge Rectifiers 125 Amps 1200V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUM33-06PH | IXYS |
Bridge Rectifiers Power MOSFET Stage for Boost Converters |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO28-12NO7 | IXYS |
Bridge Rectifiers 28 Amps 1200V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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MCMA120UJ1800ED | IXYS |
SCR Modules Thyristor Module |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO20-12NO2 | IXYS |
Bridge Rectifiers 20 Amps 1200V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO105-12NO7 | IXYS |
Bridge Rectifiers 105 Amps 1200V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VBO22-16NO8 | IXYS |
Bridge Rectifiers 22 Amps 1600V |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO105-16NO7 | IXYS |
Bridge Rectifiers 105 Amps 1600V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MCMA260PD1600YB | IXYS |
SCR Modules Thyristor/Diode Module |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO120-12NO2T | IXYS |
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO55-16NO7 | IXYS |
Bridge Rectifiers 55 Amps 1600V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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VBO13-12AO2 | IXYS |
Bridge Rectifiers 13 Amps 1200V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO36-16NO8 | IXYS |
Bridge Rectifiers 36 Amps 1600V |
auf Bestellung 1379 Stücke: Lieferzeit 10-14 Tag (e) |
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VUI72-16NOXT | IXYS |
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO52-16NO1 | IXYS |
Bridge Rectifiers 52 Amps 1600V |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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VBE55-06NO7 | IXYS |
Bridge Rectifiers 68 Amps 600V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO68-16NO7 | IXYS |
Bridge Rectifiers 68 Amps 1600V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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FUO22-16N | IXYS |
Bridge Rectifiers 22 Amps 1600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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VUO34-16NO1 | IXYS |
Bridge Rectifiers 34 Amps 1600V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO86-12NO7 | IXYS |
Bridge Rectifiers 86 Amps 1200V |
auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO82-12NO7 | IXYS |
Bridge Rectifiers 82 Amps 1200V |
auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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VUO62-12NO7 | IXYS |
Bridge Rectifiers 62 Amps 1200V |
auf Bestellung 90 Stücke: Lieferzeit 521-525 Tag (e) |
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VBE17-06NO7 | IXYS |
Bridge Rectifiers 27 Amps 600V |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH80N65X2 |
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Hersteller: IXYS
Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
auf Bestellung 5288 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.83 EUR |
| 30+ | 14.66 EUR |
| 120+ | 12.65 EUR |
| 510+ | 12.56 EUR |
| IXCY10M90S-TRL |
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Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXCY10M90S-TRL |
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Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.72 EUR |
| 10+ | 5.1 EUR |
| 25+ | 4.7 EUR |
| 100+ | 4.25 EUR |
| IXSG60N65L2K |
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Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXSG60N65L2K |
![]() |
Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.64 EUR |
| 10+ | 9.33 EUR |
| 100+ | 7.42 EUR |
| IXSA60N65L2-7TR |
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Hersteller: IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXSA60N65L2-7TR |
![]() |
Hersteller: IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.8 EUR |
| 10+ | 9.44 EUR |
| 100+ | 7.54 EUR |
| IXSH60N65L2KHV |
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Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.89 EUR |
| 10+ | 9.51 EUR |
| IXTP36N30P |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.82 EUR |
| 50+ | 4.64 EUR |
| 100+ | 4.24 EUR |
| IXFH30N50Q3 |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.55 EUR |
| 30+ | 13.8 EUR |
| 120+ | 11.88 EUR |
| IXFH30N50P |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK140N30P |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 35.2 EUR |
| 25+ | 22.86 EUR |
| 100+ | 20.71 EUR |
| IXTA1N120P |
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Hersteller: IXYS
Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.26 EUR |
| 50+ | 4.89 EUR |
| 100+ | 4.47 EUR |
| 500+ | 3.74 EUR |
| 1000+ | 3.62 EUR |
| IXTH96P085T |
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Hersteller: IXYS
Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 2449 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.82 EUR |
| 30+ | 8.11 EUR |
| 120+ | 6.85 EUR |
| 510+ | 6.17 EUR |
| IXTH68P20T |
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Hersteller: IXYS
Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 29.06 EUR |
| 30+ | 18.19 EUR |
| 120+ | 16.21 EUR |
| IXFP72N30X3 |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.26 EUR |
| 50+ | 9.08 EUR |
| 100+ | 8.39 EUR |
| 500+ | 7.64 EUR |
| IXTT11P50 |
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Hersteller: IXYS
Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.01 EUR |
| 30+ | 12.77 EUR |
| 120+ | 10.97 EUR |
| IXFN210N30X3 |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 69.73 EUR |
| 10+ | 52.46 EUR |
| 100+ | 48.75 EUR |
| GUO40-12NO1 |
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Hersteller: IXYS
Bridge Rectifiers 40 Amps 1200V
Bridge Rectifiers 40 Amps 1200V
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.98 EUR |
| 10+ | 24.11 EUR |
| FBE22-06N1 |
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Hersteller: IXYS
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
Bridge Rectifiers RECTIFIER BRIDGE ISOPLUS i4-PAC
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.07 EUR |
| 10+ | 22.7 EUR |
| 25+ | 18.43 EUR |
| VUO190-08NO7 |
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Hersteller: IXYS
Bridge Rectifiers 190 Amps 800V
Bridge Rectifiers 190 Amps 800V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 122.69 EUR |
| 10+ | 115.23 EUR |
| 25+ | 111.97 EUR |
| 50+ | 111.11 EUR |
| 100+ | 107.01 EUR |
| VUB72-16NOXT |
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Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 83.78 EUR |
| 10+ | 75.4 EUR |
| 24+ | 69.48 EUR |
| 48+ | 67.83 EUR |
| 120+ | 60.24 EUR |
| VUO160-08NO7 |
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Hersteller: IXYS
Bridge Rectifiers 160 Amps 800V
Bridge Rectifiers 160 Amps 800V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 89.5 EUR |
| 10+ | 79.69 EUR |
| GBO25-12NO1 |
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Hersteller: IXYS
Bridge Rectifiers 25 Amps 1600V
Bridge Rectifiers 25 Amps 1600V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.28 EUR |
| 10+ | 14.29 EUR |
| 25+ | 13.76 EUR |
| 112+ | 12.06 EUR |
| VUO190-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 190 Amps 1200V
Bridge Rectifiers 190 Amps 1200V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 128.8 EUR |
| 10+ | 123.24 EUR |
| 25+ | 120.01 EUR |
| 50+ | 115.93 EUR |
| 100+ | 105.34 EUR |
| 250+ | 104.91 EUR |
| VUE75-06NO7 |
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Hersteller: IXYS
Bridge Rectifiers 75 Amps 600V
Bridge Rectifiers 75 Amps 600V
auf Bestellung 1168 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.07 EUR |
| 10+ | 29.06 EUR |
| 25+ | 25.75 EUR |
| 50+ | 24.53 EUR |
| 100+ | 23.32 EUR |
| 250+ | 22.65 EUR |
| 500+ | 21.74 EUR |
| VBE100-06NO7 |
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Hersteller: IXYS
Bridge Rectifiers 100 Amps 600V
Bridge Rectifiers 100 Amps 600V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO86-16NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A
Bridge Rectifiers 3 PHS REC BRDG 1600V, 86A
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.91 EUR |
| 10+ | 30.27 EUR |
| 25+ | 21.33 EUR |
| 100+ | 19.96 EUR |
| FUO50-16N |
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Hersteller: IXYS
Bridge Rectifiers 50 Amps 1600V
Bridge Rectifiers 50 Amps 1600V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 36.19 EUR |
| 10+ | 35.29 EUR |
| 25+ | 25.03 EUR |
| 100+ | 24.78 EUR |
| VBE60-06A |
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Hersteller: IXYS
Bridge Rectifiers 60 Amps 600V
Bridge Rectifiers 60 Amps 600V
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 49.63 EUR |
| 10+ | 38.61 EUR |
| VUO35-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 35 Amps 1200V
Bridge Rectifiers 35 Amps 1200V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO121-16NO1 |
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Hersteller: IXYS
Bridge Rectifiers 121 Amps 1600V
Bridge Rectifiers 121 Amps 1600V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 118.73 EUR |
| 12+ | 90.59 EUR |
| VUO34-18NO1 |
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Hersteller: IXYS
Bridge Rectifiers 34 Amps 1800V
Bridge Rectifiers 34 Amps 1800V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 51.11 EUR |
| 10+ | 38.68 EUR |
| 120+ | 38.44 EUR |
| VUB72-12NOXT |
![]() |
Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 74.92 EUR |
| 10+ | 69.91 EUR |
| 24+ | 62.9 EUR |
| 48+ | 61.72 EUR |
| VUO110-16NO7 |
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Hersteller: IXYS
Bridge Rectifiers 110 Amps 1600V
Bridge Rectifiers 110 Amps 1600V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FBS16-06SC |
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Hersteller: IXYS
Bridge Rectifiers 16 Amps 600V
Bridge Rectifiers 16 Amps 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUE130-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 130 Amps 1200V
Bridge Rectifiers 130 Amps 1200V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 68.06 EUR |
| 10+ | 59.12 EUR |
| 100+ | 53.38 EUR |
| VBO125-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 125 Amps 1200V
Bridge Rectifiers 125 Amps 1200V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUM33-06PH |
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Hersteller: IXYS
Bridge Rectifiers Power MOSFET Stage for Boost Converters
Bridge Rectifiers Power MOSFET Stage for Boost Converters
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 108.59 EUR |
| 10+ | 83.9 EUR |
| 20+ | 83.74 EUR |
| VUO28-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 28 Amps 1200V
Bridge Rectifiers 28 Amps 1200V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 29.13 EUR |
| 10+ | 18.41 EUR |
| 100+ | 17.48 EUR |
| MCMA120UJ1800ED |
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Hersteller: IXYS
SCR Modules Thyristor Module
SCR Modules Thyristor Module
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 142.44 EUR |
| 12+ | 114.58 EUR |
| VBO20-12NO2 |
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Hersteller: IXYS
Bridge Rectifiers 20 Amps 1200V
Bridge Rectifiers 20 Amps 1200V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO105-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 105 Amps 1200V
Bridge Rectifiers 105 Amps 1200V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VBO22-16NO8 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 22 Amps 1600V
Bridge Rectifiers 22 Amps 1600V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.55 EUR |
| 10+ | 13.68 EUR |
| 100+ | 13.66 EUR |
| VBO105-16NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 105 Amps 1600V
Bridge Rectifiers 105 Amps 1600V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MCMA260PD1600YB |
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Hersteller: IXYS
SCR Modules Thyristor/Diode Module
SCR Modules Thyristor/Diode Module
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 143 EUR |
| 12+ | 138.95 EUR |
| VUO120-12NO2T |
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Hersteller: IXYS
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC
Bridge Rectifiers 3 Phase Rectifier Bridge w/ NTC
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO55-16NO7 |
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Hersteller: IXYS
Bridge Rectifiers 55 Amps 1600V
Bridge Rectifiers 55 Amps 1600V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 73.99 EUR |
| 10+ | 69.03 EUR |
| 30+ | 67.58 EUR |
| 100+ | 64.49 EUR |
| VBO13-12AO2 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 13 Amps 1200V
Bridge Rectifiers 13 Amps 1200V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| VUO36-16NO8 |
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Hersteller: IXYS
Bridge Rectifiers 36 Amps 1600V
Bridge Rectifiers 36 Amps 1600V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.83 EUR |
| 10+ | 27.28 EUR |
| 50+ | 16.65 EUR |
| 100+ | 16.63 EUR |
| VUI72-16NOXT |
![]() |
Hersteller: IXYS
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 72.99 EUR |
| 24+ | 59.45 EUR |
| VUO52-16NO1 |
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Hersteller: IXYS
Bridge Rectifiers 52 Amps 1600V
Bridge Rectifiers 52 Amps 1600V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 46.27 EUR |
| 10+ | 45.25 EUR |
| 24+ | 41.2 EUR |
| 120+ | 40.34 EUR |
| VBE55-06NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 68 Amps 600V
Bridge Rectifiers 68 Amps 600V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 34.23 EUR |
| 10+ | 31.47 EUR |
| VUO68-16NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 68 Amps 1600V
Bridge Rectifiers 68 Amps 1600V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 30.43 EUR |
| 10+ | 25.96 EUR |
| 100+ | 19.13 EUR |
| FUO22-16N |
![]() |
Hersteller: IXYS
Bridge Rectifiers 22 Amps 1600V
Bridge Rectifiers 22 Amps 1600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUO34-16NO1 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 34 Amps 1600V
Bridge Rectifiers 34 Amps 1600V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 53.36 EUR |
| 10+ | 46.34 EUR |
| 120+ | 36.84 EUR |
| VUO86-12NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 86 Amps 1200V
Bridge Rectifiers 86 Amps 1200V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 27.63 EUR |
| 10+ | 24.89 EUR |
| 25+ | 21.91 EUR |
| 50+ | 21.08 EUR |
| 100+ | 20.68 EUR |
| VUO82-12NO7 | ![]() |
![]() |
Hersteller: IXYS
Bridge Rectifiers 82 Amps 1200V
Bridge Rectifiers 82 Amps 1200V
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 61.21 EUR |
| 10+ | 53.68 EUR |
| 100+ | 48.59 EUR |
| VUO62-12NO7 |
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Hersteller: IXYS
Bridge Rectifiers 62 Amps 1200V
Bridge Rectifiers 62 Amps 1200V
auf Bestellung 90 Stücke:
Lieferzeit 521-525 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 59.91 EUR |
| 10+ | 58.06 EUR |
| 20+ | 52.76 EUR |
| 50+ | 49.67 EUR |
| VBE17-06NO7 |
![]() |
Hersteller: IXYS
Bridge Rectifiers 27 Amps 600V
Bridge Rectifiers 27 Amps 600V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 25.84 EUR |
| 10+ | 22.77 EUR |
| 25+ | 18.67 EUR |
| 100+ | 17.95 EUR |
| 250+ | 17.34 EUR |
| 500+ | 17 EUR |



































