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IXFA16N50P-TRL IXFA16N50P-TRL IXYS littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851 Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT100N30X3HV IXFT100N30X3HV IXYS littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
auf Bestellung 300 Stücke:
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30+14.82 EUR
120+12.8 EUR
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IXFH60N65X2 IXFH60N65X2 IXYS littelfuse-discrete-mosfets-ixfh60n65x2-datasheet?assetguid=05fbbc5b-c245-4dd5-af7b-8fa7f145f7f0 Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
auf Bestellung 5075 Stücke:
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30+11.62 EUR
120+9.96 EUR
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IXTP20N65X2M IXTP20N65X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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IXFP20N60X3 IXYS Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN200N10L2 IXTN200N10L2 IXYS DS100238IXTN200N10L2.pdf Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1044 Stücke:
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IXTN60N50L2 IXTN60N50L2 IXYS DS100086AIXTN60N50L2.pdf Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 2118 Stücke:
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IXTN90N25L2 IXTN90N25L2 IXYS littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 389 Stücke:
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IXFN40N90P IXFN40N90P IXYS DS100062AIXFN40N90P.pdf Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 554 Stücke:
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IXFN66N85X IXFN66N85X IXYS DS100715IXFN66N85X.pdf Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 959 Stücke:
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
auf Bestellung 800 Stücke:
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
auf Bestellung 800 Stücke:
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IXSA110N65L2-7TR IXSA110N65L2-7TR IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
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IXSG110N65L2K IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
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IXSG110N65L2K IXSG110N65L2K IXYS ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
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IXTA50N20P-TRL IXTA50N20P-TRL IXYS littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220 Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
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IXFA50N20X3 IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Description: DISCMSFT NCHULTRJNCTX3CLASS TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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CLA15E1200NPB CLA15E1200NPB IXYS Littelfuse-Power-Semiconductors-CLA15E1200NPB-Datasheet?assetguid=fd97e8db-48b0-47df-8516-733a64105e24 Description: SCR 1.2KV 33A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
auf Bestellung 3700 Stücke:
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IXTP3N100D2 IXTP3N100D2 IXYS littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1 Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
auf Bestellung 278 Stücke:
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IXTA6N50D2 IXTA6N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-6N50-Datasheet.PDF?assetguid=55BBD511-42CB-4098-A3A2-75365A398F37 Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1493 Stücke:
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50+8.68 EUR
100+8.02 EUR
500+7.27 EUR
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MCD431-22IO2 IXYS littelfusethyristormodulesthyristordiodesm4312io2datasheetpdf.pdf Description: SCR MODULE 2.2KV 1020A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 429 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1020 A
Voltage - Off State: 2.2 kV
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IXTQ86N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24 Description: MOSFET N-CH 250V 86A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Power Dissipation (Max): 540W (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
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IXTH86N25T IXTH86N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24 Description: MOSFET N-CH 250V 86A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Power Dissipation (Max): 540W (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R4N100P IXTA1R4N100P IXYS littelfuse-discrete-mosfets-ixt-1r4n100p-datasheet?assetguid=b007b850-0962-42a3-9a3b-6f5e246cdfb7 Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 455 Stücke:
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IXFH320N10T2 IXFH320N10T2 IXYS IXF%28T%2CH%29320N10T2.pdf Description: MOSFET N-CH 100V 320A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
auf Bestellung 647 Stücke:
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IXFT320N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
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IXTP26P20P IXTP26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 778 Stücke:
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IXTH48P20P IXTH48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9 Description: MOSFET P-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXTK90P20P IXTK90P20P IXYS littelfuse-discrete-mosfets-ixt-90p20p-datasheet?assetguid=b4a2751b-6a18-4402-b567-2c7291ae1466 Description: MOSFET P-CH 200V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXTQ26P20P IXTQ26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
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IXTT48P20P IXTT48P20P IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9 Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
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IXTL2N450 IXTL2N450 IXYS DS100458BIXTL2N450.pdf Description: MOSFET N-CH 4500V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 253 Stücke:
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA30E1200NPZ-Datasheet?assetguid=1777e4de-6c4c-4d06-b477-7318fed53c50 Description: SCR 1.2KV 47A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
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IXTA12N50P IXTA12N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 700 Stücke:
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IXTA94N20X4 IXTA94N20X4 IXYS IXTA94N20X4_DS.pdf Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 1372 Stücke:
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IXTA86N20X4 IXTA86N20X4 IXYS IXTA86N20X4_DS.pdf Description: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 16622 Stücke:
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IXTH94N20X4 IXTH94N20X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf?assetguid=33bf70d9-5ba2-41c1-a10d-6826f12c0832 Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 4015 Stücke:
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IXFH80N65X2 IXFH80N65X2 IXYS littelfuse-discrete-mosfets-ixf-80n65x2-datasheet?assetguid=2fa3fab3-abe9-4d9e-8e6a-191651df7b8b Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
auf Bestellung 3813 Stücke:
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IXCY10M90S-TRL IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
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IXCY10M90S-TRL IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
auf Bestellung 192 Stücke:
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IXSG60N65L2K IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
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IXSG60N65L2K IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
auf Bestellung 100 Stücke:
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IXSA60N65L2-7TR IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
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IXSA60N65L2-7TR IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
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IXSH60N65L2KHV IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
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IXTP36N30P IXTP36N30P IXYS littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0 Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 308 Stücke:
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IXFH30N50Q3 IXFH30N50Q3 IXYS littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 409 Stücke:
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IXFH30N50P IXFH30N50P IXYS 99414.pdf Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 200 Stücke:
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IXFK140N30P IXFK140N30P IXYS DS99557FIXFKFX140N30P.pdf Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 541 Stücke:
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IXTA1N120P IXTA1N120P IXYS IXTA1N120P%2C%20IXTP1N120P.pdf Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1728 Stücke:
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IXTH96P085T IXTH96P085T IXYS littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7 Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 2449 Stücke:
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IXTH68P20T IXTH68P20T IXYS DS100370AIXTHT68P20T.pdf Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
auf Bestellung 660 Stücke:
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IXFP72N30X3 IXFP72N30X3 IXYS littelfuse-discrete-mosfets-ixf-72n30x3-datasheet?assetguid=095debe6-6813-4074-9f25-63bb3df15119 Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 2450 Stücke:
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IXTT11P50 IXTT11P50 IXYS IXTx11P50_Rev2005.pdf Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 504 Stücke:
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IXFN210N30X3 IXFN210N30X3 IXYS littelfuse-discrete-mosfets-ixfn210n30x3-datasheet?assetguid=e87aeb6d-7459-4c92-990b-ae67617ef900 Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 190 Stücke:
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IXTP10P50P IXTP10P50P IXYS littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634 Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 432 Stücke:
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IXTP01N100D IXTP01N100D IXYS littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27 Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 45 Stücke:
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2+12.55 EUR
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IXTH200N10T IXTH200N10T IXYS DS99654AIXTHTQ200N10T.pdf Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 5528 Stücke:
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IXTX200N10L2 IXTX200N10L2 IXYS DS100239IXTKTX200N10L2.pdf Description: MOSFET N-CH 100V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 218 Stücke:
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IXFA16N50P-TRL littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851
IXFA16N50P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT100N30X3HV littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf
IXFT100N30X3HV
Hersteller: IXYS
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
auf Bestellung 300 Stücke:
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Anzahl Preis
1+24.08 EUR
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IXFH60N65X2 littelfuse-discrete-mosfets-ixfh60n65x2-datasheet?assetguid=05fbbc5b-c245-4dd5-af7b-8fa7f145f7f0
IXFH60N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
auf Bestellung 5075 Stücke:
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Anzahl Preis
1+19.2 EUR
30+11.62 EUR
120+9.96 EUR
510+9.57 EUR
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IXTP20N65X2M ixty2n65x2.pdf
IXTP20N65X2M
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+3.83 EUR
Mindestbestellmenge: 300
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IXFP20N60X3
Hersteller: IXYS
Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN200N10L2 DS100238IXTN200N10L2.pdf
IXTN200N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 178A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 178A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 1044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.16 EUR
10+55.26 EUR
100+51.95 EUR
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IXTN60N50L2 DS100086AIXTN60N50L2.pdf
IXTN60N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.16 EUR
10+55.26 EUR
100+51.95 EUR
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IXTN90N25L2 littelfuse-discrete-mosfets-ixtn90n25-datasheet?assetguid=22138b57-480b-473e-a2e8-a7af15dabfda
IXTN90N25L2
Hersteller: IXYS
Description: MOSFET N-CH 250V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.16 EUR
10+55.26 EUR
100+51.95 EUR
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IXFN40N90P DS100062AIXFN40N90P.pdf
IXFN40N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.85 EUR
10+46.99 EUR
100+42.86 EUR
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IXFN66N85X DS100715IXFN66N85X.pdf
IXFN66N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67 EUR
10+50.28 EUR
100+46.4 EUR
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.65 EUR
Mindestbestellmenge: 800
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.19 EUR
10+11.2 EUR
100+9.36 EUR
Mindestbestellmenge: 2
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IXSA110N65L2-7TR ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7
IXSA110N65L2-7TR
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
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IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
IXSG110N65L2K
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
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IXSG110N65L2K ixsg110n65l2k-datasheet?assetguid=d127241c-420d-4b40-9bb8-f5c211263533
IXSG110N65L2K
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
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IXTA50N20P-TRL littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220
IXTA50N20P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFA50N20X3
Hersteller: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Hersteller: IXYS
Description: DISCMSFT NCHULTRJNCTX3CLASS TO-2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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CLA15E1200NPB Littelfuse-Power-Semiconductors-CLA15E1200NPB-Datasheet?assetguid=fd97e8db-48b0-47df-8516-733a64105e24
CLA15E1200NPB
Hersteller: IXYS
Description: SCR 1.2KV 33A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
auf Bestellung 3700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+2.19 EUR
Mindestbestellmenge: 50
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IXTP3N100D2 littelfuse-discrete-mosfets-ixt-3n100-datasheet?assetguid=f0dbe4a2-4395-4958-a595-7cdc8d2662e1
IXTP3N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
50+4.41 EUR
100+4.03 EUR
Mindestbestellmenge: 3
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IXTA6N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-6N50-Datasheet.PDF?assetguid=55BBD511-42CB-4098-A3A2-75365A398F37
IXTA6N50D2
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.58 EUR
50+8.68 EUR
100+8.02 EUR
500+7.27 EUR
Mindestbestellmenge: 2
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MCD431-22IO2 littelfusethyristormodulesthyristordiodesm4312io2datasheetpdf.pdf
Hersteller: IXYS
Description: SCR MODULE 2.2KV 1020A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 429 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1020 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IXTQ86N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24
Hersteller: IXYS
Description: MOSFET N-CH 250V 86A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Power Dissipation (Max): 540W (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH86N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n25t_datasheet.pdf?assetguid=ba6c182d-54be-4e7b-8aba-8a2942707f24
IXTH86N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 86A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
Power Dissipation (Max): 540W (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R4N100P littelfuse-discrete-mosfets-ixt-1r4n100p-datasheet?assetguid=b007b850-0962-42a3-9a3b-6f5e246cdfb7
IXTA1R4N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
50+3.34 EUR
100+3.03 EUR
Mindestbestellmenge: 3
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IXFH320N10T2 IXF%28T%2CH%29320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Description: MOSFET N-CH 100V 320A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
auf Bestellung 647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.26 EUR
30+15.64 EUR
120+13.61 EUR
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IXFT320N10T2-TRL littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d
Hersteller: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTP26P20P
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.44 EUR
50+6.77 EUR
100+6.23 EUR
500+5.38 EUR
Mindestbestellmenge: 2
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IXTH48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9
IXTH48P20P
Hersteller: IXYS
Description: MOSFET P-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.05 EUR
30+12.15 EUR
120+10.42 EUR
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IXTK90P20P littelfuse-discrete-mosfets-ixt-90p20p-datasheet?assetguid=b4a2751b-6a18-4402-b567-2c7291ae1466
IXTK90P20P
Hersteller: IXYS
Description: MOSFET P-CH 200V 90A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.37 EUR
25+22.27 EUR
100+20.09 EUR
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IXTQ26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTQ26P20P
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.85 EUR
30+7.51 EUR
120+6.33 EUR
Mindestbestellmenge: 2
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IXTT48P20P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-48P20P-Datasheet.PDF?assetguid=D6490986-9633-4C32-87E4-8A3F926553B9
IXTT48P20P
Hersteller: IXYS
Description: MOSFET P-CH 200V 48A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
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IXTL2N450 DS100458BIXTL2N450.pdf
IXTL2N450
Hersteller: IXYS
Description: MOSFET N-CH 4500V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+183.27 EUR
25+157.02 EUR
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CLA30E1200NPZ-TUB Littelfuse-Power-Semiconductors-CLA30E1200NPZ-Datasheet?assetguid=1777e4de-6c4c-4d06-b477-7318fed53c50
CLA30E1200NPZ-TUB
Hersteller: IXYS
Description: SCR 1.2KV 47A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXTA12N50P Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-12N50P-Datasheet.PDF?assetguid=1EBA20B0-2CD4-4FB5-BDDC-FCD960E7D1DD
IXTA12N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
50+3.85 EUR
100+3.5 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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IXTA94N20X4 IXTA94N20X4_DS.pdf
IXTA94N20X4
Hersteller: IXYS
Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.56 EUR
50+12.39 EUR
100+11.51 EUR
500+11.03 EUR
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IXTA86N20X4 IXTA86N20X4_DS.pdf
IXTA86N20X4
Hersteller: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 16622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
50+11.58 EUR
100+10.74 EUR
500+10.18 EUR
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IXTH94N20X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf?assetguid=33bf70d9-5ba2-41c1-a10d-6826f12c0832
IXTH94N20X4
Hersteller: IXYS
Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.82 EUR
30+12.65 EUR
120+10.86 EUR
510+10.55 EUR
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IXFH80N65X2 littelfuse-discrete-mosfets-ixf-80n65x2-datasheet?assetguid=2fa3fab3-abe9-4d9e-8e6a-191651df7b8b
IXFH80N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.41 EUR
30+14.39 EUR
120+12.42 EUR
510+12.33 EUR
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
IXCY10M90S-TRL
Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
IXCY10M90S-TRL
Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.72 EUR
10+5.1 EUR
25+4.7 EUR
100+4.25 EUR
Mindestbestellmenge: 3
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IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
IXSG60N65L2K
Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
Produkt ist nicht verfügbar
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IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
IXSG60N65L2K
Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.39 EUR
10+9.16 EUR
100+7.29 EUR
Mindestbestellmenge: 2
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IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
IXSA60N65L2-7TR
Hersteller: IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+6.02 EUR
Mindestbestellmenge: 800
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IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
IXSA60N65L2-7TR
Hersteller: IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.48 EUR
10+9.23 EUR
100+7.36 EUR
Mindestbestellmenge: 2
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IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
IXSH60N65L2KHV
Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
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Anzahl Preis
2+13.64 EUR
10+9.34 EUR
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IXTP36N30P littelfuse-discrete-mosfets-ixt-36n30p-datasheet?assetguid=bf954b1e-fc82-433f-b03c-f41721f34fc0
IXTP36N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.82 EUR
50+4.64 EUR
100+4.24 EUR
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IXFH30N50Q3 littelfuse-discrete-mosfets-ixf-30n50q3-datasheet?assetguid=5b0b5bfa-14d1-4221-a3ae-274cbbd7b5ae
IXFH30N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 409 Stücke:
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Anzahl Preis
1+22.55 EUR
30+13.8 EUR
120+11.88 EUR
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IXFH30N50P 99414.pdf
IXFH30N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 200 Stücke:
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Anzahl Preis
2+15.44 EUR
30+9.14 EUR
120+7.76 EUR
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IXFK140N30P DS99557FIXFKFX140N30P.pdf
IXFK140N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.2 EUR
25+22.86 EUR
100+20.71 EUR
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IXTA1N120P IXTA1N120P%2C%20IXTP1N120P.pdf
IXTA1N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
50+4.89 EUR
100+4.47 EUR
500+3.74 EUR
1000+3.62 EUR
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IXTH96P085T littelfuse-discrete-mosfets-ixt-96p085t-datasheet?assetguid=961f5f5c-1ad9-4e7d-b8e3-2e5ee68588a7
IXTH96P085T
Hersteller: IXYS
Description: MOSFET P-CH 85V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 2449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.82 EUR
30+8.11 EUR
120+6.85 EUR
510+6.17 EUR
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IXTH68P20T DS100370AIXTHT68P20T.pdf
IXTH68P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.06 EUR
30+18.19 EUR
120+16.21 EUR
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IXFP72N30X3 littelfuse-discrete-mosfets-ixf-72n30x3-datasheet?assetguid=095debe6-6813-4074-9f25-63bb3df15119
IXFP72N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.26 EUR
50+9.08 EUR
100+8.39 EUR
500+7.64 EUR
Mindestbestellmenge: 2
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IXTT11P50 IXTx11P50_Rev2005.pdf
IXTT11P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.01 EUR
30+12.77 EUR
120+10.97 EUR
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IXFN210N30X3 littelfuse-discrete-mosfets-ixfn210n30x3-datasheet?assetguid=e87aeb6d-7459-4c92-990b-ae67617ef900
IXFN210N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 210A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.46 EUR
10+51.51 EUR
100+47.87 EUR
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IXTP10P50P littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634
IXTP10P50P
Hersteller: IXYS
Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
50+6.48 EUR
100+5.95 EUR
Mindestbestellmenge: 2
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IXTP01N100D littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27
IXTP01N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.55 EUR
Mindestbestellmenge: 2
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IXTH200N10T DS99654AIXTHTQ200N10T.pdf
IXTH200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.47 EUR
30+9.17 EUR
120+7.78 EUR
510+7.16 EUR
Mindestbestellmenge: 2
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IXTX200N10L2 DS100239IXTKTX200N10L2.pdf
IXTX200N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.04 EUR
30+34.29 EUR
120+33.89 EUR
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