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MCNA40PD2200TB MCNA40PD2200TB IXYS media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA55PD2200TB MCNA55PD2200TB IXYS media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA75PD2200TB MCNA75PD2200TB IXYS media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA95PD2200TB MCNA95PD2200TB IXYS media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
36+54.47 EUR
Mindestbestellmenge: 36
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MCNA650PD2200CB MCNA650PD2200CB IXYS media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA180N10T7-TRL IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP4N70X2M IXTP4N70X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA90N20X3 IXTA90N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210 Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA90N20X3-TRL IXFA90N20X3-TRL IXYS littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1 Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH12N100F IXFH12N100F IXYS littelfuse-discrete-mosfets-ixfh12n100-datasheet?assetguid=cefb7be4-73a0-469a-adea-87ac18070cb1 Description: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.06 EUR
30+14.75 EUR
120+12.71 EUR
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IXFT180N20X3HV IXFT180N20X3HV IXYS littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926 Description: MOSFET N-CH 200V 180A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 271 Stücke:
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1+28.02 EUR
30+17.51 EUR
120+15.57 EUR
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IXTT80N20L IXTT80N20L IXYS littelfuse-discrete-mosfets-ixt-80n20l-datasheet?assetguid=336ee21c-0426-4737-a5c8-6c7350c8a845 Description: MOSFET N-CH 200V 80A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
auf Bestellung 915 Stücke:
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1+32.35 EUR
30+20.49 EUR
120+18.72 EUR
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IXTH80N20L IXTH80N20L IXYS DS100294IXTHTT80N20L.pdf Description: MOSFET N-CH 200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
auf Bestellung 24 Stücke:
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1+24.04 EUR
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IXSG40N65L2K IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
Produkt ist nicht verfügbar
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IXSG40N65L2K IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.2 EUR
10+8.98 EUR
100+6.6 EUR
500+6.53 EUR
Mindestbestellmenge: 2
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IXTX120P20T IXTX120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e Description: MOSFET P-CH 200V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
auf Bestellung 317 Stücke:
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1+46.24 EUR
30+30.15 EUR
120+29.23 EUR
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IXFK64N60P3 IXFK64N60P3 IXYS DS100312BIXFKFX64N60P3.pdf Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 530 Stücke:
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1+32.23 EUR
25+20.68 EUR
100+17.94 EUR
500+17.04 EUR
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IXFK220N17T2 IXFK220N17T2 IXYS DS100230IXFKFX220N17T2.pdf Description: MOSFET N-CH 170V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
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IXTT240N15X4HV IXTT240N15X4HV IXYS media?resourcetype=datasheets&itemid=F07A4921-4C00-4F9E-865D-595F4766A796&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXT-240N15X4-Datasheet.PDF Description: MOSFET N-CH 150V 240A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
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IXFK240N15T2 IXFK240N15T2 IXYS DS100191IXFKFX240N15T2.pdf Description: MOSFET N-CH 150V 240A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH240N15X4 IXTH240N15X4 IXYS littelfuse-discrete-mosfets-ixt-240n15x4-datasheet?assetguid=f07a4921-4c00-4f9e-865d-595f4766a796 Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH240N15X3 IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP140P05T IXTP140P05T IXYS littelfuse-discrete-mosfets-ixt-140p05t-datasheet?assetguid=76e37d2a-9358-493f-b7bc-11456da38b21 Description: MOSFET P-CH 50V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 3945 Stücke:
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IXTT140P10T IXTT140P10T IXYS DS100371BIXTHT140P10T.pdf Description: MOSFET P-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
auf Bestellung 1864 Stücke:
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IXTK200N10P IXTK200N10P IXYS media?resourcetype=datasheets&itemid=BC29D92E-B5D3-4AE1-A0E8-773B9B8B799F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK200N10P-Datasheet.PDF Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 534 Stücke:
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IXTK200N10L2 IXTK200N10L2 IXYS DS100239IXTKTX200N10L2.pdf Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 217 Stücke:
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IXTK170P10P IXTK170P10P IXYS littelfuse-discrete-mosfets-ixt-170p10p-datasheet?assetguid=68622d8b-7303-4f51-80e6-161b6a15098f Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 113 Stücke:
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IXFX100N65X2 IXFX100N65X2 IXYS littelfuse-discrete-mosfets-ixf-100n65x2-datasheet?assetguid=bd7dffc9-72d4-4ee4-8bc2-7b72f9da7072 Description: MOSFET N-CH 650V 100A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 1545 Stücke:
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IXFT94N30P3 IXFT94N30P3 IXYS littelfuse-discrete-mosfets-ixf-94n30p3-datasheet?assetguid=1c2cbca8-18e8-479e-a630-47553c9a3855 Description: MOSFET N-CH 300V 94A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
Produkt ist nicht verfügbar
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IXSA40N65L2-7TR IXSA40N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1600 Stücke:
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800+5.44 EUR
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IXSA40N65L2-7TR IXSA40N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1680 Stücke:
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IXTT10P60 IXTT10P60 IXYS DS98849EIXTHT10P60.pdf Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 300 Stücke:
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1+23.2 EUR
30+14.16 EUR
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IXTA50N25T-TRL IXTA50N25T-TRL IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Description: MOSFET N-CH 250V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA08N100D2HV IXTA08N100D2HV IXYS littelfuse-discrete-mosfets-ixta08n100d2hv-datasheet?assetguid=23b14127-6bd0-4c59-8a5b-b6c34e880015 Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 600 Stücke:
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50+4.54 EUR
100+4.14 EUR
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IXTY08N100D2-TRL IXTY08N100D2-TRL IXYS littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA6N100D2 IXTA6N100D2 IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 1159 Stücke:
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2+16.91 EUR
50+9.43 EUR
100+8.71 EUR
500+7.45 EUR
1000+7.37 EUR
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IXFX400N15X3 IXFX400N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf?assetguid=c6e53bef-e462-4a4c-ba1f-c0550f6db46e Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK100N25P IXTK100N25P IXYS media?resourcetype=datasheets&itemid=A81F4223-C5D3-44C0-A60C-AE41A30745EF&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-100N25P-Datasheet.PDF Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXTH12N100L IXTH12N100L IXYS DS99126BIXTH12N100L.pdf Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 37 Stücke:
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IXTP18P10T IXTP18P10T IXYS littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682 Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 4689 Stücke:
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IXTY01N100D-TRL IXTY01N100D-TRL IXYS littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27 Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 7500 Stücke:
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IXTY01N100D-TRL IXTY01N100D-TRL IXYS littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27 Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 8270 Stücke:
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DCK10I650PA DCK10I650PA IXYS dck10i650pa-datasheet?assetguid=9b5d15fc-c4a1-4bf1-94e4-71dcd40e367d Description: SIC SCHOTTKY DIODE 650V 10A TO-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 398pF @ 1V, 1MHz
Current - Average Rectified (Io): 29.3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 1000 Stücke:
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DCK10I1200PA DCK10I1200PA IXYS dck10i1200pa-datasheet?assetguid=75ab63a7-eaa1-45f4-ae79-cc11d6480a07 Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1000 Stücke:
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DCK10I1200HA DCK10I1200HA IXYS dck10i1200ha-datasheet?assetguid=5be3408f-41a7-455b-8ce9-874e03b13e5b Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 885 Stücke:
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DCK15I1200HA DCK15I1200HA IXYS dck15i1200ha-datasheet?assetguid=44b53e84-c4e7-4c80-a892-b93db1544069 Description: SIC SCHOTTKY DIODE 1200V 15A TO-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 450 Stücke:
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DCK10I650HA DCK10I650HA IXYS dck10i650ha-datasheet?assetguid=e5d675c1-245d-4cad-ad47-33338feb2dfa Description: SIC SCHOTTKY DIODE 650V 10A TO-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 398pF @ 1V, 1MHz
Current - Average Rectified (Io): 30.4A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 5040 Stücke:
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DCK10I1200UZ IXYS Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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IXCY10M45S IXCY10M45S IXYS Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C Description: IC CURRENT REGULATOR TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-252AA
auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+3.99 EUR
70+3.38 EUR
140+3.23 EUR
280+3.11 EUR
560+3.01 EUR
1050+2.94 EUR
2520+2.85 EUR
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IXCY10M45S-TRL IXCY10M45S-TRL IXYS 98704.pdf Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
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IXTA4N150HV-TRL IXTA4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Description: MOSFET N-CH 1500V 4A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Description: MOSFET N-CH 1500V 4A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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IXTK120P20T IXTK120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e Description: MOSFET P-CH 200V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.86 EUR
25+36.8 EUR
100+33.39 EUR
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MCNA40PD2200TB media?resourcetype=datasheets&itemid=AA91350D-9182-4A62-AB0E-51F3B9201283&filename=Littelfuse-Power-Semiconductors-MCNA40PD2200TB-Datasheet
MCNA40PD2200TB
Hersteller: IXYS
Description: SCR MODULE 2.2KV 63A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA55PD2200TB media?resourcetype=datasheets&itemid=170F279D-DA7D-4C1E-BA38-C51A726043BB&filename=Littelfuse-Power-Semiconductors-MCNA55PD2200TB-Datasheet
MCNA55PD2200TB
Hersteller: IXYS
Description: SCR MODULE 2.2KV 86A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA75PD2200TB media?resourcetype=datasheets&itemid=8959BE89-6337-4D3B-9F1A-3F2023F2125E&filename=Littelfuse-Power-Semiconductors-MCNA75PD2200TB-Datasheet
MCNA75PD2200TB
Hersteller: IXYS
Description: SCR MODULE 2.2KV 118A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MCNA95PD2200TB media?resourcetype=datasheets&itemid=FBECFD23-7EC3-4098-8B34-555EACFFB215&filename=Littelfuse-Power-Semiconductors-MCNA95PD2200TB-Datasheet
MCNA95PD2200TB
Hersteller: IXYS
Description: SCR MODULE 2.2KV 149A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+54.47 EUR
Mindestbestellmenge: 36
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MCNA650PD2200CB media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet
MCNA650PD2200CB
Hersteller: IXYS
Description: SCR MODULE 2.2KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A, 17300A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 650 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Hersteller: IXYS
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
IXTA180N10T7-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP4N70X2M ixty2n65x2.pdf
IXTP4N70X2M
Hersteller: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Hersteller: IXYS
Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Hersteller: IXYS
Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA90N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf?assetguid=0d436688-a336-4e6b-a404-a707c9c33210
IXTA90N20X3
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA90N20X3-TRL littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1
IXFA90N20X3-TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH12N100F littelfuse-discrete-mosfets-ixfh12n100-datasheet?assetguid=cefb7be4-73a0-469a-adea-87ac18070cb1
IXFH12N100F
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.06 EUR
30+14.75 EUR
120+12.71 EUR
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IXFT180N20X3HV littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926
IXFT180N20X3HV
Hersteller: IXYS
Description: MOSFET N-CH 200V 180A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.02 EUR
30+17.51 EUR
120+15.57 EUR
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IXTT80N20L littelfuse-discrete-mosfets-ixt-80n20l-datasheet?assetguid=336ee21c-0426-4737-a5c8-6c7350c8a845
IXTT80N20L
Hersteller: IXYS
Description: MOSFET N-CH 200V 80A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.35 EUR
30+20.49 EUR
120+18.72 EUR
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IXTH80N20L DS100294IXTHTT80N20L.pdf
IXTH80N20L
Hersteller: IXYS
Description: MOSFET N-CH 200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.04 EUR
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IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
IXSG40N65L2K
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
Produkt ist nicht verfügbar
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IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
IXSG40N65L2K
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.2 EUR
10+8.98 EUR
100+6.6 EUR
500+6.53 EUR
Mindestbestellmenge: 2
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IXTX120P20T littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e
IXTX120P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.24 EUR
30+30.15 EUR
120+29.23 EUR
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IXFK64N60P3 DS100312BIXFKFX64N60P3.pdf
IXFK64N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.23 EUR
25+20.68 EUR
100+17.94 EUR
500+17.04 EUR
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IXFK220N17T2 DS100230IXFKFX220N17T2.pdf
IXFK220N17T2
Hersteller: IXYS
Description: MOSFET N-CH 170V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.65 EUR
25+14.87 EUR
100+12.78 EUR
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IXTT240N15X4HV media?resourcetype=datasheets&itemid=F07A4921-4C00-4F9E-865D-595F4766A796&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXT-240N15X4-Datasheet.PDF
IXTT240N15X4HV
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.52 EUR
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IXFK240N15T2 DS100191IXFKFX240N15T2.pdf
IXFK240N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH240N15X4 littelfuse-discrete-mosfets-ixt-240n15x4-datasheet?assetguid=f07a4921-4c00-4f9e-865d-595f4766a796
IXTH240N15X4
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
IXFH240N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP140P05T littelfuse-discrete-mosfets-ixt-140p05t-datasheet?assetguid=76e37d2a-9358-493f-b7bc-11456da38b21
IXTP140P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 3945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.8 EUR
50+8.2 EUR
100+7.86 EUR
Mindestbestellmenge: 2
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IXTT140P10T DS100371BIXTHT140P10T.pdf
IXTT140P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
auf Bestellung 1864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.08 EUR
30+23.58 EUR
120+20.63 EUR
510+20.33 EUR
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IXTK200N10P media?resourcetype=datasheets&itemid=BC29D92E-B5D3-4AE1-A0E8-773B9B8B799F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK200N10P-Datasheet.PDF
IXTK200N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.11 EUR
25+19.21 EUR
100+16.62 EUR
500+15.62 EUR
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IXTK200N10L2 DS100239IXTKTX200N10L2.pdf
IXTK200N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.86 EUR
25+44.11 EUR
100+41.14 EUR
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IXTK170P10P littelfuse-discrete-mosfets-ixt-170p10p-datasheet?assetguid=68622d8b-7303-4f51-80e6-161b6a15098f
IXTK170P10P
Hersteller: IXYS
Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.41 EUR
25+26.42 EUR
100+23.11 EUR
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IXFX100N65X2 littelfuse-discrete-mosfets-ixf-100n65x2-datasheet?assetguid=bd7dffc9-72d4-4ee4-8bc2-7b72f9da7072
IXFX100N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 100A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 1545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.7 EUR
30+19.88 EUR
120+17.29 EUR
510+16.63 EUR
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IXFT94N30P3 littelfuse-discrete-mosfets-ixf-94n30p3-datasheet?assetguid=1c2cbca8-18e8-479e-a630-47553c9a3855
IXFT94N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
Produkt ist nicht verfügbar
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IXSA40N65L2-7TR power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4
IXSA40N65L2-7TR
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.44 EUR
1600+5.42 EUR
Mindestbestellmenge: 800
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IXSA40N65L2-7TR power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4
IXSA40N65L2-7TR
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.34 EUR
10+9.1 EUR
100+6.69 EUR
Mindestbestellmenge: 2
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IXTT10P60 DS98849EIXTHT10P60.pdf
IXTT10P60
Hersteller: IXYS
Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.2 EUR
30+14.16 EUR
120+12.18 EUR
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IXTA50N25T-TRL littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTA50N25T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 250V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA08N100D2HV littelfuse-discrete-mosfets-ixta08n100d2hv-datasheet?assetguid=23b14127-6bd0-4c59-8a5b-b6c34e880015
IXTA08N100D2HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.69 EUR
50+4.54 EUR
100+4.14 EUR
500+3.44 EUR
Mindestbestellmenge: 3
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IXTY08N100D2-TRL littelfuse-discrete-mosfets-ixt-08n100-datasheet?assetguid=5f3f8653-b9a5-4c21-928a-8f26a664dbdc
IXTY08N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA6N100D2 littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTA6N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 1159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.91 EUR
50+9.43 EUR
100+8.71 EUR
500+7.45 EUR
1000+7.37 EUR
Mindestbestellmenge: 2
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IXFX400N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf?assetguid=c6e53bef-e462-4a4c-ba1f-c0550f6db46e
IXFX400N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK100N25P media?resourcetype=datasheets&itemid=A81F4223-C5D3-44C0-A60C-AE41A30745EF&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-100N25P-Datasheet.PDF
IXTK100N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.23 EUR
25+14.51 EUR
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IXTH12N100L DS99126BIXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.66 EUR
30+24.01 EUR
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IXTP18P10T littelfuse-discrete-mosfets-ixt-18p10t-datasheet?assetguid=5c1b0780-b7a9-4cdb-8b92-3cdd987c0682
IXTP18P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 4689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.54 EUR
50+2.79 EUR
100+2.53 EUR
500+2.06 EUR
1000+1.91 EUR
2000+1.78 EUR
Mindestbestellmenge: 4
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IXTY01N100D-TRL littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27
IXTY01N100D-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.07 EUR
Mindestbestellmenge: 2500
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IXTY01N100D-TRL littelfuse-discrete-mosfets-ixt-01n100d-datasheet?assetguid=90f68c0c-66ed-4288-bfb0-3c2769323c27
IXTY01N100D-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 8270 Stücke:
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Anzahl Preis
3+8.71 EUR
10+5.81 EUR
100+4.16 EUR
500+3.76 EUR
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DCK10I650PA dck10i650pa-datasheet?assetguid=9b5d15fc-c4a1-4bf1-94e4-71dcd40e367d
DCK10I650PA
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 650V 10A TO-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 398pF @ 1V, 1MHz
Current - Average Rectified (Io): 29.3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
3+7.15 EUR
50+3.67 EUR
100+3.34 EUR
500+2.75 EUR
1000+2.56 EUR
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DCK10I1200PA dck10i1200pa-datasheet?assetguid=75ab63a7-eaa1-45f4-ae79-cc11d6480a07
DCK10I1200PA
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 28A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
2+9.22 EUR
50+4.84 EUR
100+4.42 EUR
500+3.68 EUR
1000+3.45 EUR
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DCK10I1200HA dck10i1200ha-datasheet?assetguid=5be3408f-41a7-455b-8ce9-874e03b13e5b
DCK10I1200HA
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 885 Stücke:
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Anzahl Preis
2+9.66 EUR
30+5.48 EUR
120+4.56 EUR
510+3.88 EUR
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DCK15I1200HA dck15i1200ha-datasheet?assetguid=44b53e84-c4e7-4c80-a892-b93db1544069
DCK15I1200HA
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 1200V 15A TO-
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 888pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 450 Stücke:
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Anzahl Preis
2+11.23 EUR
30+6.45 EUR
120+5.4 EUR
Mindestbestellmenge: 2
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DCK10I650HA dck10i650ha-datasheet?assetguid=e5d675c1-245d-4cad-ad47-33338feb2dfa
DCK10I650HA
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 650V 10A TO-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 398pF @ 1V, 1MHz
Current - Average Rectified (Io): 30.4A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 5040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
10+4.98 EUR
450+3.39 EUR
Mindestbestellmenge: 3
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DCK10I1200UZ
Hersteller: IXYS
Description: SIC SCHOTTKY DIODE 1200V 10A TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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IXCY10M45S Littelfuse-Power-Semi-IXCP10M45S-IXCY10M45s?assetguid=731077FA-A99E-41C1-BC82-960F7ED0C52C
IXCY10M45S
Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-252AA
auf Bestellung 2908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+3.99 EUR
70+3.38 EUR
140+3.23 EUR
280+3.11 EUR
560+3.01 EUR
1050+2.94 EUR
2520+2.85 EUR
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IXCY10M45S-TRL 98704.pdf
IXCY10M45S-TRL
Hersteller: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
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IXTA4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
IXTA4N150HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1500V 4A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
Hersteller: IXYS
Description: MOSFET N-CH 1500V 4A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
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DSP8-12S-TRL Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d
DSP8-12S-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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DSP8-12S-TRL Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d
DSP8-12S-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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IXTK120P20T littelfuse_discrete_mosfets_p-channel_ixt_120p20t_datasheet.pdf?assetguid=67b5be5e-bc83-47b6-b9a2-f0699eb6249e
IXTK120P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.86 EUR
25+36.8 EUR
100+33.39 EUR
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